是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | not_compliant |
风险等级: | 5.92 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 26 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 300 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH26N60P | IXYS |
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Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Met | |
IXTH26N60P | LITTELFUSE |
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Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Met | |
IXTH26P20P | IXYS |
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P-Channel Enhancement Mode Avalanche Rated | |
IXTH26P20P | LITTELFUSE |
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Polar? P通道MOSFET采用我们的Polar技术平台制造,相比传统产品将通态电阻( | |
IXTH270N04T4 | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTH270N04T4 | IXYS |
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Power Field-Effect Transistor | |
IXTH27N35MA | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 27A I(D) | TO-247(5) | |
IXTH27N35MB | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH27N40MA | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH27N40MB | IXYS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |