Datasheet > IXTH21N50

IXTH21N50

更新时间： 2024-11-19 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		开关高压脉冲电源开关调节器
页数	文件大小	规格书
5页	701K
描述
高压系列N通道标准MOSFET适用于多种多样的电源开关系统，包括高压电源、电容放电电路、脉冲电路和电流调节器。功能与特色: 应用: 优点:

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中文翻译

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数据手册

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IXTH21N50 数据手册

MegaMOS^TMFET

V_DSS

I_D25R_DS(on)

IXTH / IXTM 21N50

IXTH / IXTM 24N50

500V 21 A 0.25 Ω

500V 24 A 0.23 Ω

N-ChannelEnhancementMode

Symbol

Test Conditions

MaximumRatings

TO-247 AD (IXTH)

V_DSS

V_DGR

T_J= 25°C to 150°C

500

T_J= 25°C to 150°C; R_GS= 1 MΩ

D(TAB)

V_GS

Continuous

Transient

±20

±30

V_GSM

I_D25

T_C= 25°C

21N50

24N50

TO-204 AE (IXTM)

I_DM

T_C= 25°C, pulse width limited by T_JM

21N50

24N50

P_D

T_C= 25°C

300

T_J

-55 ... +150

150

°C

T_JM

T_stg

G = Gate,

S = Source,

D = Drain,

TAB = Drain

-55 ... +150

M_d

Mountingtorque

1.13/10 Nm/lb.in.

TO-204 = 18 g, TO-247 = 6 g

300 °C

Weight

Maximumleadtemperatureforsoldering

1.6 mm (0.062 in.) from case for 10 s

Features

Internationalstandardpackages

Low R_{DS (on)}HDMOS^TMprocess

Rugged polysilicon gate cell structure

Low package inductance (< 5 nH)

- easy to drive and to protect

Fast switching times

Symbol

Test Conditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Applications

Switch-modeandresonant-mode

powersupplies

Motorcontrols

UninterruptiblePowerSupplies(UPS)

DC choppers

V_DSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 250 µA

500

V_GS(th)

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100 nA

200 µA

V_DS= 0.8 • V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Advantages

Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

Space savings

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

21N50

24N50

0.25

0.23

Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

Highpowerdensity

IXYS reserves the right to change limits, test conditions, and dimensions.

91536F(5/97)

1 - 4

12 3 4 5

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与IXTH21N50相关器件

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IXTH21N50Q	IXYS	获取价格	Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Met
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IXTH21N60	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 21A I(D) \| TO-218VAR
IXTH220N055T	IXYS	获取价格	Power Field-Effect Transistor, 220A I(D), 55V, 0.004ohm, 1-Element, N-Channel, Silicon, Me
IXTH220N075T	IXYS	获取价格	Power Field-Effect Transistor, 220A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, M
IXTH22N50P	LITTELFUSE	获取价格	Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Met
IXTH22N50P	IXYS	获取价格	Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Met
IXTH22P15	IXYS	获取价格	Transistor,
IXTH22P20	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 22A I(D) \| TO-218VAR
IXTH23N25MA	IXYS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,