Datasheet > IXTH1N200P3HV

IXTH1N200P3HV

更新时间： 2024-01-30 00:08:58

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	271K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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IXTH1N200P3HV 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	8.34	Base Number Matches：	1

IXTH1N200P3HV 数据手册

IXTH1N200P3 IXTA1N200P3HV

IXTH1N200P3HV

Fig. 1. Output Characteristics @ T_J= 25^oC

Fig. 2. Output Characteristics @ T_J= 125^oC

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

= 10V

V_DS- Volts

Fig. 4. R_DS(on)Normalized to I_D= 0.5A Value vs.

Drain Current

Fig. 3. R_DS(on)Normalized to I_D= 0.5A Value vs.

Junction Temperature

2.8

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

3.0

2.6

2.2

1.8

1.4

1.0

0.6

0.2

= 10V

T = 125^oC

= 1A

= 0.5A

T = 25^oC

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

-50

-25

100

125

150

I_D- Amperes

T_J- Degrees Centigrade

Fig. 5. Maximum Drain Current vs.

Case Temperature

Fig. 6. Input Admittance

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1.2

1.0

0.8

0.6

0.4

0.2

0.0

= 125^oC

25^oC

- 40^oC

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

-50

-25

100

125

150

V_GS- Volts

T_C- Degrees Centigrade

1 234 5

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