Datasheet > IXTH1N200P3HV

IXTH1N200P3HV

更新时间： 2024-01-17 09:44:23

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	271K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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IXTH1N200P3HV 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	8.34	Base Number Matches：	1

IXTH1N200P3HV 数据手册

IXTH1N200P3 IXTA1N200P3HV

IXTH1N200P3HV

Symbol

Test Conditions

Characteristic Values

TO-247 Outline

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

g_fs

V_DS= 50V, I_D= 0.5A, Note 1

V_GS= 0V, V_DS= 25V, f = 1MHz

0.4

0.7

C_iss

C_oss

C_rss

646

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

_GS= 10V, V_DS= 1kV, I_D= 0.5 • I_D25

1 - Gate

2,4 - Drain

3 - Source

R_G= 5 (External)

Q_g(on)

Q_gs

23.5

3.1

V_GS= 10V, V_DS= 1kV, I_D= 0.5 • I_D25

Q_gd

13.3

R_thJC

R_thCS

1.0 C/W

C/W

TO-247

0.21

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

I_S

V_GS= 0V

I_SM

V_SD

t_rr

Repetitive, Pulse Width Limited by T_JM

I_F= I_S, V_GS= 0V, Note 1

TO-247HV Outline

1.5

0P1

I_F= 1A, -di/dt = 100A/μs, V_R= 100V

2.3

μs

Note:

1. Pulse test, t  300s, duty cycle, d  2%.

PINS:

1 - Gate 2 - Source

3, 4 - Drain

TO-263HV Outline

GAUGE

PLANE

PIN: 1 - Gate

08

2 - Source

3 - Drain

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1

4,835,592 4,931,844 5,049,961 5,237,481 6,162,665

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405 B2 6,759,692

6,710,463

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

123 4 5

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