Datasheet > IXTH1N200P3HV

IXTH1N200P3HV

更新时间： 2024-02-17 05:27:27

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	271K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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IXTH1N200P3HV 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	8.34	Base Number Matches：	1

IXTH1N200P3HV 数据手册

IXTH1N200P3 IXTA1N200P3HV

IXTH1N200P3HV

Fig. 7. Transconductance

Fig. 8. Forward Voltage Drop of Intrinsic Diode

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

3.0

2.5

2.0

1.5

1.0

0.5

0.0

= - 40^oC

25^oC

= 125^oC

125^oC

= 25^oC

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

V_SD- Volts

I_D- Amperes

Fig. 10. Capacitance

Fig. 9. Gate Charge

10,000

1,000

100

= 1 MHz

= 1000V

= 0.5A

= 10mA

iss

oss

rss

Fig. 11. Maximum Transient Thermal Impedance

Q_G- NanoCoulombs

V_DS- Volts

Fig. 11. Maximum Transient Thermal Impedance

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0.1

0.01

0.00001

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

1 2 345

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