Datasheet > IXTH20N65X

IXTH20N65X

更新时间： 2024-01-07 17:46:17

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
7页	287K
描述
Power Field-Effect Transistor,

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技术参数
数据手册
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IXTH20N65X 技术参数

生命周期：	Not Recommended	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.71
Base Number Matches：	1

IXTH20N65X 数据手册

Preliminary Technical Information

X-Class

Power MOSFET

V_DSS= 650V

I_D25= 20A

R_DS(on) 210m

IXTA20N65X

IXTP20N65X

IXTH20N65X

N-Channel Enhancement Mode

TO-263 (IXTA)

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

TO-220 (IXTP)

T_J= 25C to 150C

650

V_DGR

T_J= 25C to 150C, R_GS= 1M

V_GSS

V_GSM

Continuous

Transient

30

40

D (Tab)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

TO-247 (IXTH)

dv/dt

P_D

I_S I_D25, V_DD V_DSS, T_J 150°C

T_C= 25C

V/ns

320

T_J

-55 ... +150

150

C

D (Tab)

T_JM

T_stg

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

G = Gate

S = Source

= Drain

Tab = Drain

F_C

M_d

Mounting Force (TO-263)

Mounting Torque (TO-220 & TO-247)

10.65 / 2.2..14.6

1.13 / 10

N/lb

Nm/lb.in

Features

Weight

TO-263

TO-220

TO-247

2.5

3.0

6.0



International Standard Packages

Low R_DS(ON)and Q_G



Low Package Inductance

Advantages

Symbol

Test Conditions

Characteristic Values



High Power Density

Easy to Mount

Space Savings

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

650

3.0

5.5

Applications

100 nA

A



Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

I_DSS

T_J= 125C

50 A



R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

210 m



DS100564E(6/15)

12 3 4 5 6 7

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