生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.28 |
其他特性: | AVALANCE RATED | 雪崩能效等级(Eas): | 2500 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (Abs) (ID): | 20 A |
最大漏极电流 (ID): | 20 A | 最大漏源导通电阻: | 0.45 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-247 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 460 W | 最大脉冲漏极电流 (IDM): | 60 A |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH21N45 | IXYS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH21N50 | IXYS |
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MegaMOSFET | |
IXTH21N50 | LITTELFUSE |
获取价格 |
高压系列N通道标准MOSFET适用于多种多样的电源开关系统,包括高压电源、电容放电电路、脉 | |
IXTH21N50Q | IXYS |
获取价格 |
Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
IXTH21N55 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 21A I(D) | TO-218VAR | |
IXTH21N60 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 21A I(D) | TO-218VAR | |
IXTH220N055T | IXYS |
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Power Field-Effect Transistor, 220A I(D), 55V, 0.004ohm, 1-Element, N-Channel, Silicon, Me | |
IXTH220N075T | IXYS |
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Power Field-Effect Transistor, 220A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, M | |
IXTH22N50P | LITTELFUSE |
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Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Met | |
IXTH22N50P | IXYS |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Met |