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IXTH20N50D PDF预览

IXTH20N50D

更新时间: 2024-01-29 20:45:09
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 156K
描述
Power Field-Effect Transistor, 20A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN

IXTH20N50D 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-247AA
包装说明:GREEN, PLASTIC, TO-247, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:8.32
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):20 A
最大漏极电流 (ID):20 A最大漏源导通电阻:0.33 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AA
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):400 W
最大脉冲漏极电流 (IDM):50 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTH20N50D 数据手册

 浏览型号IXTH20N50D的Datasheet PDF文件第2页浏览型号IXTH20N50D的Datasheet PDF文件第3页浏览型号IXTH20N50D的Datasheet PDF文件第4页浏览型号IXTH20N50D的Datasheet PDF文件第5页 
VDSS  
ID25  
= 500 V  
20 A  
High Voltage  
MOSFET  
N-Channel, Depletion Mode  
IXTH 20N50D  
IXTT 20N50D  
=
RDS(on) = 0.33 Ω  
PreliminaryDataSheet  
TO-247(IXFH)  
Symbol  
TestConditions  
Maximum Ratings  
VDSX  
VDGX  
VGS  
VGSM  
ID25  
IDM  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C  
Continuous  
500  
500  
V
V
G
D
± 30  
V
S
(TAB)  
Transient  
± 40  
V
TC = 25°C  
20  
A
TO-268 (IXTT)  
TC = 25°C; pulse width limited by TJM  
TC = 25°C  
50  
A
PD  
400  
W
°C  
°C  
°C  
G
TJ  
-55 ... + 150  
150  
S
D (TAB)  
TJM  
Tstg  
-55 ... + 150  
G = Gate  
D
= Drain  
S = Source  
TAB = Drain  
TL  
1.6 mm (0.063 in) from case for 10 seconds  
Plastic case for 10 seconds  
Mounting torque  
300  
300  
°C  
°C  
TISOL  
Md  
1.13/10  
Nm/lb.in.  
Features  
Weight  
TO-247  
TO-268  
6
4
g
g
z
Normally ON Mode  
z
z
International standard packages  
Molding epoxies meet UL94 V-0  
flammability classification  
Symbol  
VDSX  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min.  
typ.  
max.  
Applications  
VGS = -10 V, ID = 250 mA  
500  
V
z
Level shifting  
VGS(off)  
IGSS  
VDS = 25 V, ID = 250 mA  
VGS = ± 30 VDC, VDS = 0  
-1.5  
-3.5  
V
z
Triggers  
z
Solid State Relays  
± 100  
nA  
z
Current Regulators  
z
IDSX(off)  
VDS = VDSS  
VGS = -10 V  
TJ = 25°C  
TJ = 125°C  
25  
500  
μA  
μA  
Activeload  
RDS(on)  
ID(on)  
VGS = 10 V, ID = 10 A  
VGS = 0 V, VDS= 25 V  
Note 1  
Note 1  
0.33  
Ω
1.5  
A
© 2006 IXYS All rights reserved  
99192(01/06)  

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