是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.82 | Is Samacsys: | N |
配置: | Single | 最大漏极电流 (Abs) (ID): | 20 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 300 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH20N60 | IXYS |
获取价格 |
MegaMOS FET | |
IXTH20N60 | LITTELFUSE |
获取价格 |
高压系列N通道标准MOSFET适用于多种多样的电源开关系统,包括高压电源、电容放电电路、脉 | |
IXTH20N60MA | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | TO-247(5) | |
IXTH20N60MB | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | TO-247(5) | |
IXTH20N65X | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, | |
IXTH20N65X | IXYS |
获取价格 |
Power Field-Effect Transistor, | |
IXTH20P25 | IXYS |
获取价格 |
Transistor | |
IXTH20P50P | IXYS |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 500V, 0.45ohm, 1-Element, P-Channel, Silicon, Met | |
IXTH20P50P | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, | |
IXTH21N45 | IXYS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |