型号 | 品牌 | 描述 | 获取价格 | 数据表 |
IXTH200N075T | IXYS | Preliminary Technical Information Trench Gate Power MOSFET |
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IXTH200N085T | IXYS | Power Field-Effect Transistor, 200A I(D), 85V, 0.005ohm, 1-Element, N-Channel, Silicon, Me |
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IXTH200N10T | IXYS | TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated |
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IXTH200N10T | LITTELFUSE | 沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低 |
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IXTH20N50D | IXYS | Power Field-Effect Transistor, 20A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Met |
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IXTH20N50D | LITTELFUSE | Power Field-Effect Transistor, 20A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Met |
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