5秒后页面跳转
IXTH1R8N220P3HV PDF预览

IXTH1R8N220P3HV

更新时间: 2024-01-22 18:18:44
品牌 Logo 应用领域
力特 - LITTELFUSE 开关高压脉冲电源开关
页数 文件大小 规格书
6页 193K
描述
Polar3?标准功率MOSFET适用于多种多样的电源开关系统,包括高压电源、电容放电电路、脉冲电路、激光和X射线发生系统、高压自动检测设备和电网的能量吸收应用。 凭借通态电压的正温度系数,这种高

IXTH1R8N220P3HV 数据手册

 浏览型号IXTH1R8N220P3HV的Datasheet PDF文件第2页浏览型号IXTH1R8N220P3HV的Datasheet PDF文件第3页浏览型号IXTH1R8N220P3HV的Datasheet PDF文件第4页浏览型号IXTH1R8N220P3HV的Datasheet PDF文件第5页浏览型号IXTH1R8N220P3HV的Datasheet PDF文件第6页 
Advance Technical Information  
High Voltage  
Power MOSFET  
VDSS  
ID25  
= 2200V  
= 1.8A  
IXTH1R8N220P3HV  
RDS(on)  21.5  
N-Channel Enhancement Mode  
TO-247HV  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
S
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
2200  
2200  
V
V
D (Tab)  
D
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
ID25  
ID110  
IDM  
TC = 25C  
TC = 110C  
TC = 25C, Pulse Width Limited by TJM  
1.8  
1.0  
4.0  
A
A
A
PD  
TC = 25C  
194  
W
Features  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
High Blocking Voltage  
High Voltage Package  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in  
g
Easy to Mount  
Space Savings  
Weight  
High Power Density  
Applications  
High Voltage Power Supplies  
Capacitor Discharge Applications  
Pulse Circuits  
Laser and X-Ray Generation Systems  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
2200  
2.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = 0.8 • VDSS, VGS = 0V  
V
V
4.0  
100 nA  
IDSS  
10 A  
TJ = 125C  
200  A  
RDS(on)  
VGS = 10V, ID = 0.9A, Note 1  
21.5  
DS100639(12/14)  
© 2014 IXYS CORPORATION, All Rights Reserved  

与IXTH1R8N220P3HV相关器件

型号 品牌 描述 获取价格 数据表
IXTH200N075T IXYS Preliminary Technical Information Trench Gate Power MOSFET

获取价格

IXTH200N085T IXYS Power Field-Effect Transistor, 200A I(D), 85V, 0.005ohm, 1-Element, N-Channel, Silicon, Me

获取价格

IXTH200N10T IXYS TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

获取价格

IXTH200N10T LITTELFUSE 沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低

获取价格

IXTH20N50D IXYS Power Field-Effect Transistor, 20A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Met

获取价格

IXTH20N50D LITTELFUSE Power Field-Effect Transistor, 20A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Met

获取价格