型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH200N075T | IXYS |
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Preliminary Technical Information Trench Gate Power MOSFET | |
IXTH200N085T | IXYS |
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Power Field-Effect Transistor, 200A I(D), 85V, 0.005ohm, 1-Element, N-Channel, Silicon, Me | |
IXTH200N10T | IXYS |
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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated | |
IXTH200N10T | LITTELFUSE |
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沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低 | |
IXTH20N50D | IXYS |
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Power Field-Effect Transistor, 20A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Met | |
IXTH20N50D | LITTELFUSE |
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Power Field-Effect Transistor, 20A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Met | |
IXTH20N55 | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH20N55MA | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH20N55MB | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH20N60 | IXYS |
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MegaMOS FET |