Datasheet > IXTH1R4N250P3

IXTH1R4N250P3

更新时间： 2024-11-06 14:56:03

品牌	Logo	应用领域
力特 - LITTELFUSE		开关高压脉冲电源开关
页数	文件大小	规格书
6页	182K
描述
Polar3?标准功率MOSFET适用于多种多样的电源开关系统，包括高压电源、电容放电电路、脉冲电路、激光和X射线发生系统、高压自动检测设备和电网的能量吸收应用。凭借通态电压的正温度系数，这种高

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IXTH1R4N250P3 数据手册

Advance Technical Information

High Voltage

Power MOSFET

V_DSS

I_D25

= 2500V

= 1.4A

IXTH1R4N250P3

R_DS(on) 28

N-Channel Enhancement Mode

Fast Intrinsic Diode

TO-247 (IXTH)

Symbol

V_DSS

Test Conditions

Maximum Ratings

Tab

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

2500

V_DGR

G = Gate

S = Source

= Drain

V_GSS

V_GSM

Continuous

Transient

20

30

Tab = Drain

I_D25

I_D110

I_DM

T_C= 25C

T_C= 110C

T_C= 25C, Pulse Width Limited by T_JM

1.4

1.0

3.5

P_D

T_C= 25C

195

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

C

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C



High Blocking Voltage

Fast Intrinsic Diode

Low Package Inductance



M_d

Mounting Torque

1.13/10

Nm/lb.in

Weight

Advantages



Easy to Mount

Space Savings

High Power Density



Applications

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

2500

2.0

Typ.

Max.



High Voltage Power Supplies

Capacitor Discharge Applications

Pulse Circuits

Laser and X-Ray Generation Systems



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_GS= 20V, V_DS= 0V

V_DS= 0.8 • V_DSS, V_GS= 0V



4.0



100 nA

I_DSS

25 A

T_J= 125C

250  A

R_DS(on)

V_GS= 10V, I_D= 0.7A, Note 1



DS100592(01/14)

12 3 4 5 6

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