Datasheet > IXTH1N100

IXTH1N100

更新时间： 2024-09-15 03:13:43

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	77K
描述
High Voltage MOSFET

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数据手册
替代型号

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IXTH1N100 数据手册

Advance Technical Information

V_DSS

I_D25

= 1000 V

= 1.5 A

IXTH 1N100

IXTT 1N100

High Voltage MOSFET

R_DS(on)= 11 Ω

N-ChannelEnhancementMode

AvalancheEnergyRated

Symbol

TestConditions

Maximum Ratings

TO-247AD(IXTH)

V_DSS

V_DGR

T_J= 25°C to 150°C

1000

T_J= 25°C to 150°C; R_GS= 1 MΩ

V_GS

Continuous

Transient

±20

±30

D (TAB)

V_GSM

I_D25

I_DM

T_C= 25°C

1.5

T_C= 25°C, pulse width limited by T_JM

TO-268 Case Style

I_AR

1.5

E_AR

E_AS

T_C= 25°C

200

(TAB)

dv/dt

≤ I , di/dt ≤ 100 A/µs, V ≤ V

V/ns

DSS

≤ 150°C, R = 18 Ω

P_D

T_C= 25°C

G = Gate,

S = Source,

D = Drain,

TAB = Drain

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

M_d

Mounting torque (TO-247)

1.13/10 Nm/lb.in.

Features

Weight

TO-268

TO-247

International standard packages

High voltage, Low R_{DS (on)}HDMOS^TM

process

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Rugged polysilicon gate cell structure

Fast switching times

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Applications

min. typ. max.

Switch-mode and resonant-mode

power supplies

V_DSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 25 µA

1000

2.5

Flyback inverters

V_GS(th)

4.5

DC choppers

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100 nA

High frequency matching

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

25 µA

500 µA

Advantages

Space savings

R_DS(on)

V_GS= 10 V, I_D= 1.0A

Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

High power density

98886 (1/2)

中文翻译

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IXTH1N100 替代型号

型号	品牌	替代类型	描述	数据表
IXTT1N100	IXYS	类似代替	High Voltage MOSFET
IXTY1R4N100P	IXYS	功能相似	N-Channel Enhancement Mode Avalanche Rated
IXTP1N100	IXYS	功能相似	High Voltage MOSFET

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