Datasheet > IXTH1N170DHV

IXTH1N170DHV

更新时间： 2024-11-11 20:11:11

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	239K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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IXTH1N170DHV 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	8.41	Base Number Matches：	1

IXTH1N170DHV 数据手册

Preliminary Technical Information

Depletion Mode

MOSFET

V_DSX= 1700V

I_D(on)> 1A

IXTA1N170DHV

IXTH1N170DHV

R_DS(on) 16

N-Channel

TO-263HV (IXTA)

D (Tab)

TO-247HV (IXTH)

Symbol

V_DSX

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

1700

V_DGX

V_GSX

V_GSM

Continuous

Transient

20

30

P_D

T_C= 25C

290

D (Tab)

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

C

G = Gate

S = Source

= Drain

Tab = Drain

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

F_C

Mounting Force (TO-263HV)

Mounting Torque (TO-247HV)

10..65 / 22..14.6

1.13/10

N/lb

M_d

Nm/lb.in

Features

Weight

TO-263HV

TO-247HV

2.5

6.0

• Normally ON Mode

• Molding Epoxies Meet UL94V-0

Flammability Classification

Advantages

Symbol

Test Conditions

Characteristic Values

• Easy to Mount

(T_J= 25C, Unless Otherwise Specified)

Min.

1700

- 2.5

Typ.

Max.

• Space Savings

• High Power Density

BV_DSX

V_GS(off)

I_GSX

V_GS= - 5V, I_D= 250A

V_DS= 25V, I_D= 250A

V_GS= 20V, V_DS= 0V

V_DS= V_DSX, V_GS= - 5V

- 4.5

Applications

100 nA

• Audio Amplifiers

• Start-Up Circuits

• Protection Circuits

• Ramp Generators

• Current Regulators

• Active Loads

I_DSX(off)

10 A

100 A

T_J= 125C

R_DS(on)

I_D(on)

V_GS= 0V, I_D= 0.5A, Note 1

V_GS= 0V, V_DS= 50V, Note 1



1.0

DS100609A(2/17)

12 3 4 5

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