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IXGH32N60AS PDF预览

IXGH32N60AS

更新时间: 2024-11-04 22:47:59
品牌 Logo 应用领域
IXYS 晶体晶体管电动机控制双极性晶体管局域网
页数 文件大小 规格书
2页 48K
描述
HiPerFAST IGBT

IXGH32N60AS 技术参数

生命周期:Obsolete零件包装代码:TO-247SMD
包装说明:FLANGE MOUNT, R-PSFM-G2针数:3
Reach Compliance Code:unknown风险等级:5.83
外壳连接:COLLECTOR最大集电极电流 (IC):60 A
集电极-发射极最大电压:600 V配置:SINGLE
最大降落时间(tf):175 ns门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJESD-30 代码:R-PSFM-G2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):200 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):140 ns
标称接通时间 (ton):25 nsBase Number Matches:1

IXGH32N60AS 数据手册

 浏览型号IXGH32N60AS的Datasheet PDF文件第2页 
IXGH 32N60A  
IXGH 32N60AS  
VCES  
IC25  
= 600 V  
= 60 A  
HiPerFASTTM IGBT  
VCE(sat)  
tfi  
= 2.9 V  
= 125 ns  
TO-247 SMD  
(32N60AS)  
Symbol  
TestConditions  
Maximum Ratings  
C (TAB)  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
G
E
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TO-247 AD  
IC25  
IC90  
ICM  
TC = 25°C  
60  
32  
A
A
A
TC = 90°C  
TAB)  
G
TC = 25°C, 1 ms  
120  
C
E
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 33 Ω  
Clamped inductive load, L = 100 µH  
ICM = 64  
@ 0.8 VCES  
A
G = Gate  
E = Emitter  
C = Collector  
TAB = Collector  
PC  
TC = 25°C  
200  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
International standard packages  
JEDEC TO-247 SMD surface  
mountable and JEDEC TO-247 AD  
High current handling capability  
2nd generation HDMOSTM process  
MOS Gate turn-on  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Md  
Mounting torque (M3)  
1.13/10Nm/lb.in.  
Weight  
TO-247 AD  
TO-247 SMD  
6
4
g
g
- drive simplicity  
Applications  
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Switched-mode and resonant-mode  
power supplies  
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
600  
2.5  
V
V
Advantages  
Space savings (two devices in one  
5
package)  
High power density  
Suitable for surface mounting  
Switching speed for high frequency  
applications  
Easy to mount with 1 screw,TO-247  
(isolated mounting screw hole)  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200 µA  
mA  
1
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
2.9  
VCE(sat)  
IC = IC90, VGE = 15 V  
V
©1995 IXYS Corporation. All rights reserved.  
IXYS Corporation  
92793H (3/96)  
IXYS Semiconductor GmbH  
3540 Bassett Street, Santa Clara CA 95054  
Edisonstr. 15,D-68623 Lampertheim  
Phone: (408) 982-0700, Fax: 408-496-0670  
Phone: +49-6206-503-0 Fax: +49-6206-503627  

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