Datasheet > IXFK44N80Q3

IXFK44N80Q3

更新时间： 2024-11-05 12:31:19

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	132K
描述
N-Channel Enhancement Mode Avalanche RatedFast Intrinsic Rectifier

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中文翻译

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数据手册
替代型号

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IXFK44N80Q3 数据手册

HiperFET^TM

Power MOSFETs

Q3-Class

V_DSS= 800V

I_D25= 44A

R_DS(on)≤ 190mΩ

IXFK44N80Q3

IXFX44N80Q3

t_rr

≤ 300ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

TO-264 (IXFK)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

800

V_DGR

Tab

V_GSS

V_GSM

Continuous

Transient

±30

±40

PLUS247 (IXFX)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

130

I_A

E_AS

T_C= 25°C

3.5

Tab

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

G = Gate

S = Source

= Drain

1250

Tab = Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

Features

M_d

F_C

Mounting Torque (TO-264)

Mounting Force (PLUS247)

1.13/10

Nm/lb.in.

N/lb.

International Standard Packages

Avalanche Rated

Low Intrinsic Gate Resistance

Low Package Inductance

Fast Intrinsic Rectifier

20..120 /4.5..27

Weight

TO-264

PLUS247

Low R_DS(on)and Q_G

Advantages

Symbol

Test Conditions

Characteristic Values

High Power Density

Easy to Mount

Space Savings

(T_J= 25°C Unless Otherwise Specified)

Min.

800

3.5

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ±30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

6.5

Applications

±200 nA

DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode

I_DSS

50 μA

2.5 mA

T_J= 125°C

Power Supplies

DC Choppers

Temperature and Lighting Controls

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

190 mΩ

DS100359B(10/12)

12 3 4 5

中文翻译

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IXFK44N80Q3 替代型号

型号	品牌	替代类型	描述	数据表
IXFK44N80P	IXYS	类似代替	PolarHV HiPerFET Power MOSFET
IXFX44N80Q3	IXYS	功能相似	MOSFET N-CH 800V 44A PLUS247
IXFX44N80P	IXYS	功能相似	PolarHV HiPerFET Power MOSFET

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