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IXFK48N50Q_03 PDF预览

IXFK48N50Q_03

更新时间: 2024-11-05 11:14:03
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描述
HiPerFET Power MOSFETs Q-CLASS

IXFK48N50Q_03 数据手册

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HiPerFETTM  
Power MOSFETs  
Q-CLASS  
VDSS ID25  
RDS(on)  
IXFK/IXFX 48N50Q 500 V 48 A 100 mΩ  
IXFK/IXFX 44N50Q 500 V 44 A 120 mΩ  
trr 250 ns  
Single MOSFET Die  
N-ChannelEnhancementMode  
AvalancheRated, LowQg  
High dV/dt, Low trr  
PLUS247TM
Symbol  
TestConditions  
Maximum Ratings  
(TAB)  
G
D
VDSS  
VDGR  
T
= 25°C to 150°C  
500  
500  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
TO-264AA(IXFK)  
VGS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
IDM  
IAR  
TC = 25°C  
44N50  
48N50  
44N50  
48N50  
44  
48  
176  
192  
48  
A
A
A
A
A
G
D
(TAB)  
S
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
EAR  
EAS  
T
= 25°C  
60  
2.5  
mJ  
J
TCC = 25°C  
Features  
z
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
15  
V/ns  
IXYS advanced low Qg process  
z
Low gate charge and capacitances  
- easier to drive  
PD  
TC = 25°C  
500  
W
- faster switching  
z
z
z
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
International standard packages  
Low RDS (on)  
Rated for unclamped Inductive load  
switching (UIS) rated  
Molding epoxies meet UL 94 V-0  
flammability classification  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
z
Md  
Mounting torque  
TO-264  
0.4/6  
Nm/lb.in.  
Weight  
PLUS 247  
TO-264  
6
10  
g
g
Applications  
z
DC-DC converters  
Battery chargers  
Switched-mode and resonant-mode  
power supplies  
DC choppers  
AC motor control  
Temperature and lighting controls  
z
Symbol  
TestConditions  
Characteristic Values  
z
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
VDSS  
VGS = 0 V, ID = 250uA  
500  
2.0  
V
z
z
VGS(th)  
VDS = VGS, ID = 4mA  
4.0 V  
IGSS  
VGS = 20 V, VDS = 0  
100 nA  
Advantages  
z
PLUS 247TM package for clip or spring  
IDSS  
VDS = VDSS  
VGS = 0 V  
100 µA  
2 mA  
mounting  
Space savings  
TJ = 125°C  
z
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Note 1  
44N50  
48N50  
120 mΩ  
100 mΩ  
z
High power density  
© 2003 IXYS All rights reserved  
DS98612D(08/03)  

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