Datasheet > IXFK520N075T2

IXFK520N075T2

更新时间： 2024-11-18 20:31:11

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
7页	218K
描述
Power Field-Effect Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXFK520N075T2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Is Samacsys：	N	Base Number Matches：	1

IXFK520N075T2 数据手册

TrenchT2^TM

IXFK520N075T2

IXFX520N075T2

V_DSS= 75V

I_D25= 520A

R_DS(on) 2.2m

GigaMOS^TMHiperFET^TM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

TO-264 (IXFK)

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

Tab

V_DSS

V_DGR

T_J= 25C to 175C

T_J= 25C to 175C, R_GS= 1M

PLUS247 (IXFX)

V_GSS

V_GSM

Continuous

Transient

 20

 30

I_D25

I_L(RMS)

I_DM

T_C= 25C (Chip Capability)

External Lead Current Limit

T_C= 25C, Pulse Width Limited by T_JM

520

160

1350

Tab

I_A

E_AS

T_C= 25C

200

G = Gate

= Drain

P_D

T_C= 25C

1250

S = Source

Tab = Drain

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

C

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

^International Standard Packages

^High Current Handling Capability

^Fast Intrinsic Diode

M_d

F_C

Mounting Torque (TO-264)

Mounting Force (PLUS247)

1.13/10

Nm/lb.in

N/lb

20..120 /4.5..27

^Avalanche Rated

Weight

TO-264

PLUS247



Low R_DS(on)

Advantages



Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values



(T_J= 25C Unless Otherwise Specified)

Min.

Typ.

Max.



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS=  20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

2.5

5.0

Applications

^DC-DC Converters and Off-Line UPS

^Primary-Side Switch

^High Speed Power Switching

Applications

200 nA

25 A

I_DSS

T_J= 150C

R_DS(on)

V_GS= 10V, I_D= 100A, Notes 1 & 2

2.2 m

DS100211B(4/18)

12 3 4 5 6 7

中文翻译

下载PDF

与IXFK520N075T2相关器件

型号	品牌	获取价格	描述	数据表
IXFK52N100X	LITTELFUSE	获取价格	采用快速体二极管的超级结X-Class功率MOSFET是坚固耐用的器件，具有业内最低的导通
IXFK52N30	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 300V V(BR)DSS \| 52A I(D) \| TO-264AA
IXFK52N30Q	IXYS	获取价格	N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacita
IXFK52N30Q	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXFK52N60Q2	IXYS	获取价格	Advanced Technical Information
IXFK52N60Q2_08	IXYS	获取价格	HiPerFET Power MOSFETs Q2-Class
IXFK55N50	IXYS	获取价格	HiPerFET Power MOSFET
IXFK55N50	LITTELFUSE	获取价格	功能与特色: 应用: 优点:
IXFK55N50F	IXYS	获取价格	HiPerRFTM Power MOSFETs
IXFK60N25Q	IXYS	获取价格	HiPerFET Power MOSFETs Q-Class