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IXFK66N85X PDF预览

IXFK66N85X

更新时间: 2024-11-03 14:56:55
品牌 Logo 应用领域
力特 - LITTELFUSE 高电压电源二极管
页数 文件大小 规格书
7页 403K
描述
采用快速体二极管的超级结X-Class功率MOSFET是坚固耐用的器件,具有业内最低的导通电阻,因此能够在高电压电源转换应用中实现高功率密度。 这种器件采用电荷补偿原理和专有工艺技术开发,具有低栅

IXFK66N85X 数据手册

 浏览型号IXFK66N85X的Datasheet PDF文件第2页浏览型号IXFK66N85X的Datasheet PDF文件第3页浏览型号IXFK66N85X的Datasheet PDF文件第4页浏览型号IXFK66N85X的Datasheet PDF文件第5页浏览型号IXFK66N85X的Datasheet PDF文件第6页浏览型号IXFK66N85X的Datasheet PDF文件第7页 
X-Class HiPerFETTM  
Power MOSFET  
VDSS = 850V  
ID25 = 66A  
RDS(on) 65m  
IXFK66N85X  
IXFX66N85X  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
D
S
TO-264P  
(IXFK)  
G
G
D
D (Tab)  
S
Symbol  
Test Conditions  
Maximum Ratings  
PLUS247  
(IXFX)  
VDSS  
VDGR  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
850  
850  
V
V
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
66  
140  
A
A
D (Tab)  
S
IA  
EAS  
TC = 25C  
TC = 25C  
33  
2.5  
A
J
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
PD  
TC = 25C  
1250  
50  
W
dv/dt  
IS IDM, VDD VDSS, TJ 150°C  
V/ns  
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
International Standard Packages  
Low QG  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Avalanche Rated  
Low Package Inductance  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
20..120 /4.5..27  
Advantages  
Weight  
TO-264  
PLUS247  
10  
6
g
g
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 8mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
850  
V
V
Switch-Mode and Resonant-Mode  
Power Supplies  
3.5  
5.5  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
100 nA  
IDSS  
50 A  
TJ = 125C  
3 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
65 m  
© 2019 IXYS CORPORATION, All Rights Reserved  
DS100714B(11/19)  

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