Datasheet > IXFK66N85X

IXFK66N85X

更新时间： 2024-11-19 14:56:55

品牌	Logo	应用领域
力特 - LITTELFUSE		高电压电源栅二极管
页数	文件大小	规格书
7页	403K
描述
采用快速体二极管的超级结X-Class功率MOSFET是坚固耐用的器件，具有业内最低的导通电阻，因此能够在高电压电源转换应用中实现高功率密度。这种器件采用电荷补偿原理和专有工艺技术开发，具有低栅

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中文翻译

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数据手册

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IXFK66N85X 数据手册

X-Class HiPerFET^TM

Power MOSFET

V_DSS= 850V

I_D25= 66A

R_DS(on) 65m

IXFK66N85X

IXFX66N85X

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-264P

(IXFK)

D (Tab)

Symbol

Test Conditions

Maximum Ratings

PLUS247

(IXFX)

V_DSS

V_DGR

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

850

V_GSS

V_GSM

Continuous

Transient

 30

 40

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

140

D (Tab)

I_A

E_AS

T_C= 25C

2.5

G = Gate

= Drain

S = Source

Tab = Drain

P_D

T_C= 25C

1250

dv/dt

I_S I_DM, V_DD V_DSS, T_J 150°C

V/ns

Features

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C



International Standard Packages

Low Q_G



T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Avalanche Rated

Low Package Inductance

M_d

F_C

Mounting Torque (TO-264)

Mounting Force (PLUS247)

1.13/10

Nm/lb.in

N/lb

20..120 /4.5..27

Advantages

Weight

TO-264

PLUS247



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values

Applications

(T_J= 25C Unless Otherwise Specified)

Min.

Typ.

Max.



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 8mA

V_GS=  30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

850

Switch-Mode and Resonant-Mode

Power Supplies



3.5

5.5

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls



100 nA



I_DSS

50 A

T_J= 125C

3 mA

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

65 m

DS100714B(11/19)

12 3 4 5 6 7

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