Datasheet > IXFK64N60P3

IXFK64N60P3

更新时间： 2024-11-21 19:02:15

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	133K
描述
Power Field-Effect Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXFK64N60P3 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.69
Base Number Matches：	1

IXFK64N60P3 数据手册

Polar3^TMHiPerFET^TM

Power MOSFET

V_DSS= 600V

I_D25= 64A

IXFK64N60P3

IXFX64N60P3

R_DS(on) 100m

t_rr

 250ns

N-Channel Enhancement Mode

Avalanche Rated

TO-264 (IXFK)

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

600

Tab

V_GSS

V_GSM

Continuous

Transient

 30

 40

PLUS247 (IXFX)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

160

I_A

E_AS

T_C= 25C

1.5

Tab

P_D

T_C= 25C

1130

G = Gate

S = Source

= Drain

dv/dt

I_S I_DM, V_DD V_DSS, T_J 150°C

V/ns

Tab = Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

^Dynamic dv/dt Rating

^Avalanche Rated

^Fast Intrinsic Diode

^Low Q_G

^Low R_DS(on)

^Low Drain-to-Tab Capacitance

^Low Package Inductance

M_d

F_C

Mounting Torque (TO-264)

Mounting Force (PLUS247)

1.13/10

Nm/lb.in

N/lb

20..120 /4.5..27

Weight

TO-264

PLUS247

Advantages

Symbol

Test Conditions

Characteristic Values



Easy to Mount

Space Savings

(T_J= 25C Unless Otherwise Specified)

Min.

Typ.

Max.



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 4mA

V_GS=  30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

600

3.0

5.0

Applications

200 nA

25 A

^DC-DC Converters

^Battery Chargers

I_DSS

^Switch-Mode and Resonant-Mode

Power Supplies

T_J= 125C

^Uninterrupted Power Supplies

^AC Motor Drives

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

100 m

^High Speed Power Switching

Applications

DS100312B(04/14)

12 3 4 5 6

中文翻译

下载PDF

与IXFK64N60P3相关器件

型号	品牌	获取价格	描述	数据表
IXFK64N60Q3	IXYS	获取价格	Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Me
IXFK66N50Q2	IXYS	获取价格	HiPerFET Power MOSFETs Q2-Class
IXFK66N50Q2	LITTELFUSE	获取价格	功能与特色: 应用: 优点:
IXFK66N85X	LITTELFUSE	获取价格	采用快速体二极管的超级结X-Class功率MOSFET是坚固耐用的器件，具有业内最低的导通
IXFK69N30P	IXYS	获取价格	Power Field-Effect Transistor, 69A I(D), 300V, 0.049ohm, 1-Element, N-Channel, Silicon, Me
IXFK72N20	IXYS	获取价格	HiPerFET Power MOSFETs
IXFK72N20S	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 72A I(D) \| TO-264SMD
IXFK73N30	IXYS	获取价格	HiPerFET Power MOSFETs
IXFK73N30	LITTELFUSE	获取价格	功能与特色: 应用: 优点:
IXFK73N30Q	IXYS	获取价格	HiPerFET Power MOSFETs Q-CLASS