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IXFK80N50P PDF预览

IXFK80N50P

更新时间: 2024-11-18 11:14:03
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 229K
描述
PolarHV HiPerFET Power MOSFET

IXFK80N50P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-264AA
包装说明:TO-264, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:6.94
其他特性:AVALANCHE RATED雪崩能效等级(Eas):3500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):80 A
最大漏源导通电阻:0.065 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-264AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):200 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFK80N50P 数据手册

 浏览型号IXFK80N50P的Datasheet PDF文件第2页浏览型号IXFK80N50P的Datasheet PDF文件第3页浏览型号IXFK80N50P的Datasheet PDF文件第4页浏览型号IXFK80N50P的Datasheet PDF文件第5页 
PolarHVTM HiPerFET  
Power MOSFET  
IXFK 80N50P  
IXFX 80N50P  
VDSS = 500 V  
ID25 = 80 A  
RDS(on) 65 mΩ  
trr  
200 ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
TO-264 (IXFK)  
VDSS  
VDGR  
TJ = 25° C to 150° C  
TJ = 25° C to 150° C; RGS = 1 MΩ  
500  
500  
V
V
VGSM  
VGSM  
Transient  
Continuous  
40  
30  
V
V
G
D (TAB)  
ID25  
IL  
IDM  
TC =25° C  
Lead Current Limit, RMS  
TC = 25° C, pulse width limited by TJM  
80  
75  
200  
A
A
A
D
S
PLUS247 (IXFX)  
IAR  
EAR  
EAS  
TC =25° C  
TC =25° C  
TC =25° C  
80  
80  
3.5  
A
mJ  
J
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 2 Ω  
,
20  
V/ns  
D
S
TC =25° C  
1040  
W
D (TAB)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
D = Drain  
S = Source  
Tab = Collector  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
FC  
Mounting force (PLUS247)  
Mounting torque (TO-264)  
20..120/4.5..25  
N/lb  
Md  
1.13/10 Nm/lb.in.  
Features  
Weight  
TO-264  
10  
6
g
g
l
International standard package  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
PLUS247  
l
l
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 500 µA  
500  
V
V
Advantages  
VDS = VGS, ID = 8 mA  
3.0  
5.0  
l
Easy to mount  
Space savings  
VGS  
=
30 VDC, VDS = 0  
200  
nA  
l
l
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
2
µA  
mA  
High power density  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
65 mΩ  
DS99437E(03/06)  
© 2006 IXYS All rights reserved  

IXFK80N50P 替代型号

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