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IXFK90N30 PDF预览

IXFK90N30

更新时间: 2024-11-20 22:07:55
品牌 Logo 应用领域
IXYS 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
4页 127K
描述
HiPerFET Power MOSFETs

IXFK90N30 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-264
包装说明:TO-264, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.66Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):3000 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:300 V最大漏极电流 (Abs) (ID):90 A
最大漏极电流 (ID):90 A最大漏源导通电阻:0.033 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-264
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):560 W最大脉冲漏极电流 (IDM):360 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFK90N30 数据手册

 浏览型号IXFK90N30的Datasheet PDF文件第2页浏览型号IXFK90N30的Datasheet PDF文件第3页浏览型号IXFK90N30的Datasheet PDF文件第4页 
HiPerFETTM  
Power MOSFETs  
IXFX 90N30  
IXFK 90N30  
VDSS = 300 V  
ID25 = 90 A  
RDS(on) = 33 mΩ  
Single MOSFET Die  
t 250 ns  
rr  
PLUS247TM  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
300  
300  
V
V
(TAB)  
G
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
D
ID25  
ID104  
IDM  
TC = 25°C (MOSFET chip capability)  
TC = 104°C (External lead capability)  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
90  
75  
360  
90  
A
A
A
A
TO-264AA(IXFK)  
IAR  
G
D
(TAB)  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
64  
3
mJ  
J
S
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
5
V/ns  
PD  
TJ  
TC = 25°C  
560  
W
-55 ... +150  
°C  
Features  
l
International standard packages  
Low RDS (on) HDMOSTM process  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
l
l
l
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
Md  
Mounting torque  
TO-264  
0.4/6  
Nm/lb.in.  
l
l
Low package inductance  
- easy to drive and to protect  
Fast intrinsic rectifier  
Weight  
PLUS 247  
TO-264  
6
10  
g
g
Applications  
l
DC-DC converters  
l
Battery chargers  
Symbol  
VDSS  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
l
Switched-mode and resonant-mode  
power supplies  
min. typ. max.  
l
DC choppers  
VGS = 0 V, ID = 3mA  
300  
2.0  
V
l
AC motor control  
l
Temperature and lighting controls  
VGS(th)  
IGSS  
VDS = VGS, ID = 8mA  
4.0 V  
VGS = ±20 V, VDS = 0  
±100 nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
100 µA  
2 mA  
l
PLUS 247TM package for clip or spring  
mounting  
l
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Note 1  
33 mΩ  
Space savings  
l
High power density  
98537A (12/01)  
© 2001 IXYS All rights reserved  

IXFK90N30 替代型号

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