是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.84 | Is Samacsys: | N |
配置: | Single | 最大漏极电流 (Abs) (ID): | 13 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 175 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
IXFL14N60 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 14A I(D) | TO-254 |
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IXFL150 | IXYS | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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IXFL18N50 | LITTELFUSE | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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IXFL18N50 | IXYS | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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|
IXFL210N30P3 | LITTELFUSE | Power Field-Effect Transistor, |
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IXFL210N30P3 | IXYS | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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