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IXFL34N100 PDF预览

IXFL34N100

更新时间： 2024-02-22 11:58:54
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
2页 118K
描述
HiPerFETTM Power MOSFETs ISOPLUS264(Electrically Isolated Backside)

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中文翻译

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IXFL34N100 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：IN-LINE, R-PSIP-T3
针数：3Reach Compliance Code：compliant
风险等级：5.79其他特性：AVALANCHE RATED
雪崩能效等级（Eas）：4000 mJ外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：1000 V
最大漏极电流 (Abs) (ID)：30 A最大漏极电流 (ID)：30 A
最大漏源导通电阻：0.28 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSIP-T3JESD-609代码：e1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：550 W
最大脉冲漏极电流 (IDM)：136 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IXFL34N100 数据手册

 浏览型号IXFL34N100的Datasheet PDF文件第2页 
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HiPerFETTM Power MOSFETs  
IXFL 34N100 VDSS = 1000 V  
ID25 30 A  
RDS(on) = 0.28 Ω  
ISOPLUS264TM  
=
(Electrically Isolated Backside)  
Single Die MOSFET  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low trr  
Preliminary Data Sheet  
ISOPLUS-264TM  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
1000  
1000  
V
V
G
C
(TAB)  
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
E
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, Note 1  
TC = 25°C  
30  
136  
34  
A
A
A
G = Gate  
C = Collector  
E = Emitter  
Tab = Collector  
EAR  
TC = 25°C  
TC = 25°C  
64  
4
mJ  
J
Features  
EAS  
z Silicon chip on Direct-Copper-Bond  
substrate  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
5
V/ns  
- High power dissipation  
- Isolated mounting surface  
-2500Velectricalisolation  
z Lowdraintotabcapacitance(<30pF)  
z Low RDS (on) HDMOSTM process  
z Ruggedpolysilicongatecellstructure  
z UnclampedInductiveSwitching(UIS)  
rated  
z FastintrinsicRectifier  
Applications  
PD  
TC = 25°C  
550  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
1.6 mm (0.063 in.) from case for 10 s  
50/60 Hz, RMS t = 1 min  
300  
°C  
VISOL  
2500  
3000  
V~  
V~  
I
ISOL ≤ 1 mA  
t = 1 s  
Weight  
Symbol  
5
g
z
DC-DC converters  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
Batterychargers  
z
Switched-mode and resonant-mode  
power supplies  
VDSS  
VGS = 0 V, ID = 3mA  
VDS = VGS, ID = 8mA  
1000  
2.5  
V
z
DC choppers  
z AC motor control  
VGS(th)  
IGSS  
5.0 V  
±100 nA  
VGS = ±20 VDC, VDS = 0  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ  
=
25°C  
100 µA  
z
TJ = 125°C  
2 mA  
Easy assembly  
z
Space savings  
RDS(on)  
VGS = 10 V, ID = IT  
Note 1  
0.28  
Ω
z
High power density  
98932 (7/02)  
© 2002 IXYS All rights reserved  
12

中文翻译

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IXFL34N100 替代型号

型号 品牌 替代类型 描述 数据表
IXFL38N100Q2 IXYS

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