Datasheet > IXFL40N110P

IXFL40N110P

更新时间： 2024-01-31 15:02:18

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	206K
描述
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中文翻译

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数据手册

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IXFL40N110P 数据手册

Polar^TMHiPerFET^TM

Power MOSFET

V_DSS= 1100V

I_D25= 21A

IXFL40N110P

R_DS(on) 280m

(Electrically Isolated Tab)

t_rr

 300ns

N-Channel Enhancement Mode

Avalanche Rated

ISOPLUS i5-Pak^TM(HV)

Fast Intrinsic Rectifier

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

1100

V_DGR

V_GSS

V_GSM

Continuous

Transient

30

40

Isolated Tab

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

G = Gate

D = Drain

S = Source

100

I_A

E_AS

T_C= 25C

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150C

T_C= 25C

V/ns

Features

357

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C



Silicon Chip on Direct-Copper-Bond

Substrate

- High Power Dissipation

- Isolated Mounting Surface

- 2500V~ Electrical Isolation

Avalanche Rated

Low Package Inductance

Fast Intrinsic Rectifier

Low R_DS(on)and Q_G

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C



F_C

Mounting Force

20..120 / 4.5..27

N/lb

V_ISOL

50/60 Hz, RMS t = 1 min

2500

3000

I_ISOL 1 mA

t = 1 s

Weight

Advantages



Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values

AApplications

(T_J= 25C Unless Otherwise Specified)

Min.

1100

3.5

Typ.

Max.



DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 1mA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V



6.5

Power Supplies

AC Motor Control

High Speed Power Switching

300 nA



I_DSS

50 A

3 mA

Appliccation

T_J= 125C

R_DS(on)

V_GS= 10V, I_D= 20A, Note 1

280 m

DS99900B(8/17)

12 3 4 5 6

中文翻译

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