HiPerFETTM
Power MOSFET
Q2-Class
VDSS = 500V
ID25 = 55A
IXFL80N50Q2
R
≤ 66mΩ
trrDS(on) ≤ 250ns
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic RG
High dV/dt, Low trr
ISOPLUS264TM( IXFL)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
500
500
V
V
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
G
D
Isolated Tab
S
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
55
320
A
A
G = Gate
D = Drain
IA
EAS
TC = 25°C
TC = 25°C
80
5
A
J
S = Source
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
20
380
V/ns
W
Features
ꢀ
Electrically isolated mounting tab
Double metal process for low gate
resistance
ꢀ
ꢀ
ꢀ
ꢀ
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
Unclamped Inductive Switching
(UIS) rated
TL
TSOLD
1.6 mm (0.063 in.) from case for 10s
Plastic body for 10s
300
260
°C
°C
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
FC
Mounting force
30..120/6.7..27
N/lbs
Applications
VISOL
50/60 Hz, RMS t = 1 min
2500
3000
V~
V~
IISOL ≤ 1 mA
t = 1 s
ꢀ
DC-DC converters
Switched-mode and resonant-mode
ꢀ
Weight
Symbol
10
g
power supplies
DC choppers
Pulse generation
Laser drivers
ꢀ
ꢀ
Test Conditions
Characteristic Values
ꢀ
(TJ = 25°C, unless otherwise specified)
Min.
Typ. Max.
Advantages
ꢀ
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 1mA
VDS = VGS, ID = 8mA
VGS = ±30 V, VDS = 0V
500
V
V
2500 V~ Electrical isolation
ISOPLUS 264TM package for clip or
ꢀ
3.0
5.5
spring mounting
Space savings
High power density
ꢀ
± 200 nA
100 μA
ꢀ
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
5
mA
RDS(on)
VGS = 10V, ID = 40A, Note 1
66 mΩ
DS99360B(05/08)
© 2008 IXYS CORPORATION, All rights reserved