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IXFL60N80P PDF预览

IXFL60N80P

更新时间: 2024-11-19 14:56:31
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 174K
描述
功能与特色: 优点: 应用:

IXFL60N80P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
风险等级:5.74其他特性:AVALANCHE RATED, UL RECOGNIZED
雪崩能效等级(Eas):5000 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (ID):40 A最大漏源导通电阻:0.15 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):150 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFL60N80P 数据手册

 浏览型号IXFL60N80P的Datasheet PDF文件第2页浏览型号IXFL60N80P的Datasheet PDF文件第3页浏览型号IXFL60N80P的Datasheet PDF文件第4页浏览型号IXFL60N80P的Datasheet PDF文件第5页 
PolarTM HiPerFETTM  
Power MOSFET  
VDSS = 800V  
ID25 = 40A  
RDS(on) 150m  
IXFL60N80P  
(Electrically Isolated Tab)  
trr  
250ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
ISOPLUS264  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
800  
800  
V
V
G
VDGR  
D
S
Isolated Tab  
= Drain  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G = Gate  
S = Source  
D
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
40  
A
A
150  
IA  
EAS  
TC = 25C  
TC = 25C  
30  
5
A
J
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
20  
V/ns  
W
Features  
625  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Silicon Chip on Direct-Copper-Bond  
Substrate  
- High Power Dissipation  
- Isolated Mounting Surface  
- 2500V~ Electrical Isolation  
Avalanche Rated  
Low Package Inductance  
Fast Intrinsic Rectifier  
Low RDS(on) and QG  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
FC  
Mounting Force  
40..120 / 9..27  
N/lb.  
VISOL  
50/60 Hz, RMS t = 1 min  
2500  
3000  
V~  
V~  
IISOL 1 mA  
t = 1 s  
Weight  
8
g
Advantages  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
AApplications  
(TJ = 25C Unless Otherwise Specified)  
Min.  
800  
3.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
5.0  
Power Supplies  
AC Motor Control  
High Speed Power Switching  
Appliccation  
200 nA  
IDSS  
25 A  
3 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 30A, Note 1  
150 m  
DS99531F(8/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  

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