Datasheet > IXFL80N50Q2

IXFL80N50Q2

更新时间： 2024-01-19 17:03:32

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	134K
描述
HiPerFET Power MOSFET Q2-Class

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中文翻译

获取价格

数据手册

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IXFL80N50Q2 数据手册

HiPerFET^TM

Power MOSFET

Q2-Class

V_DSS= 500V

I_D25= 55A

IXFL80N50Q2

≤ 66mΩ

t_rr^DS(on)≤ 250ns

(Electrically Isolated Tab)

N-Channel Enhancement Mode

Avalanche Rated, Low Q_g, Low Intrinsic R_G

High dV/dt, Low t_rr

ISOPLUS264^TM( IXFL)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

500

V_GSS

V_GSM

Continuous

Transient

± 30

± 40

Isolated Tab

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

320

G = Gate

D = Drain

I_A

E_AS

T_C= 25°C

S = Source

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

380

V/ns

Features

ꢀ

Electrically isolated mounting tab

Double metal process for low gate

resistance

ꢀ

T_J

-55 ... +150

°C

T_JM

T_stg

150

-55 ... +150

°C

Unclamped Inductive Switching

(UIS) rated

T_L

T_SOLD

1.6 mm (0.063 in.) from case for 10s

Plastic body for 10s

300

260

°C

Low package inductance

- easy to drive and to protect

Fast intrinsic diode

F_C

Mounting force

30..120/6.7..27

N/lbs

Applications

V_ISOL

50/60 Hz, RMS t = 1 min

2500

3000

I_ISOL≤ 1 mA

t = 1 s

ꢀ

DC-DC converters

Switched-mode and resonant-mode

ꢀ

Weight

Symbol

power supplies

DC choppers

Pulse generation

Laser drivers

ꢀ

Test Conditions

Characteristic Values

ꢀ

(T_J= 25°C, unless otherwise specified)

Min.

Typ. Max.

Advantages

ꢀ

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 1mA

V_DS= V_GS, I_D= 8mA

V_GS= ±30 V, V_DS= 0V

500

2500 V~ Electrical isolation

ISOPLUS 264^TMpackage for clip or

ꢀ

3.0

5.5

spring mounting

Space savings

High power density

ꢀ

± 200 nA

100 μA

ꢀ

I_DSS

V_DS= V_DSS

V_GS= 0V

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 40A, Note 1

66 mΩ

DS99360B(05/08)

12 3 4

中文翻译

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