Datasheet > IXFL34N100_09

IXFL34N100_09

更新时间： 2024-11-21 11:14:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	109K
描述
HiPerFET Power MOSFET ISOPLUS264

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中文翻译

获取价格

数据手册

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IXFL34N100_09 数据手册

HiPerFET^TMPower

MOSFET

V_DSS= 1000V

I_D25= 30A

R_DS(on)≤ 280mΩ

IXFL34N100

ISOPLUS264^TM

(Electrically Isolated Tab)

Single-Die MOSFET

N-Channel Enhancement Mode

Avalanche Rated, Low Q_g, High dV/dt, Low t_rr

ISOPLUS264

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

1000

ISOLATED TAB

V_GSS

V_GSM

Continuous

Transient

± 20

± 30

G = Gate

D = Drain

S = Source

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

136

I_A

E_AS

T_C= 25°C

Features

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/μs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

^zSilicon Chip on Direct-Copper Bond

(DCB) Substrate

- High Power Dissipation

- Isolated Mounting Surface

- 2500V Electrical Isolation

P_D

T_J

T_C= 25°C

550

-55 ... +150

°C

T_JM

T_stg

150

-55 ... +150

°C

^zLow Drain to Tab Capacitance(<30pF)

^zLow RDS (on) HDMOS^TMProcess

^zRugged Polysilicon Gate Cell Structure

^zAvalanche Rated

T_L

T_SOLD

1.6 mm (0.063 in.) from Case for 10s

Plastic body for 10s

300

260

°C

^zFast intrinsic Rectifier

F_C

Mounting Force

40..120 / 9..27

N/lb.

Advantages

V_ISOL

50/60 Hz, RMS t = 1 min

2500

3000

I_ISOL≤ 1 mA

t = 1 s

^zHigh Power Density

^zEasy to Mount

^zSpace Savings

Weight

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

1000

3.0

Typ.

Max.

Applications:

BV_DSS

V_GS(th)

V_GS= 0 V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

^zSwitched-Mode and Resonant-Mode

Power Supplies

5.5

^zDC-DC Converters

I_GSS

I_DSS

V_GS= ±20 V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

± 100 nA

^zDC Choppers

100 μA

^zLaser Drivers

T_J= 125°C

2 mA

^zAC and DC Motor Drives

^zRobotics and Servo Controls

R_DS(on)

V_GS= 10V, I_D= 17A, Note 1

280 mΩ

DS98932D(7/09)

中文翻译

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