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IXFL38N100Q2 PDF预览

IXFL38N100Q2

更新时间: 2024-02-16 12:50:39
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页数 文件大小 规格书
4页 134K
描述
HiPerFET Power MOSFET Q2-Class

IXFL38N100Q2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:PLASTIC, ISOPLUS264, 3 PIN
针数:3Reach Compliance Code:compliant
风险等级:5.67其他特性:AVALANCHE RATED
雪崩能效等级(Eas):5000 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:1000 V
最大漏极电流 (Abs) (ID):29 A最大漏极电流 (ID):29 A
最大漏源导通电阻:0.28 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):380 W
最大脉冲漏极电流 (IDM):152 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFL38N100Q2 数据手册

 浏览型号IXFL38N100Q2的Datasheet PDF文件第2页浏览型号IXFL38N100Q2的Datasheet PDF文件第3页浏览型号IXFL38N100Q2的Datasheet PDF文件第4页 
HiPerFETTM  
Power MOSFET  
Q2-Class  
VDSS = 1000V  
ID25 = 29A  
IXFL38N100Q2  
R
280mΩ  
trrDS(on) 300ns  
N-Channel Enhancement Mode  
Avalanche Rated, Low Qg, Low Intrinsic RG  
High dV/dt, Low trr  
ISOPLUS264TM( IXFL)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
1000  
1000  
V
V
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
G
D
Isolated Tab  
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
29  
152  
A
A
G = Gate  
S = Source  
D = Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
38  
5
A
J
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
20  
380  
V/ns  
W
Features  
Electrically isolated mounting tab  
Double metal process for low gate  
resistance  
Unclamped Inductive Switching  
(UIS) rated  
Low package inductance  
- easy to drive and to protect  
Fast intrinsic diode  
TJ  
-55 ... +150  
°C  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
TL  
TSOLD  
1.6 mm (0.063 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
FC  
Mounting force  
30..120/6.7..27  
N/lbs  
Applications  
VISOL  
50/60 Hz, RMS t = 1 min  
2500  
3000  
V~  
V~  
IISOL 1 mA  
t = 1 s  
DC-DC converters  
Switched-mode and resonant-mode  
Weight  
Symbol  
10  
g
power supplies  
DC choppers  
Pulse generation  
Laser drivers  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
Advantages  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 1mA  
VDS = VGS, ID = 8mA  
VGS = ±30 V, VDS = 0V  
1000  
V
V
2500 V~ Electrical isolation  
ISOPLUS 264TM package for clip or  
3.0  
5.5  
spring mounting  
Space savings  
High power density  
± 200 nA  
100 μA  
IDSS  
VDS = VDSS  
VGS = 0V  
TJ = 125°C  
5
mA  
RDS(on)  
VGS = 10V, ID = 19A, Note 1  
280 mΩ  
DS99512A(05/08)  
© 2008 IXYS CORPORATION, All rights reserved  

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