Datasheet > IXFL38N100P

IXFL38N100P

更新时间： 2024-11-26 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	155K
描述
功能与特色: 优点: 应用:

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中文翻译

获取价格

数据手册

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IXFL38N100P 数据手册

Preliminary Technical Information

Polar^TMPower MOSFET

V_DSS= 1000V

I_D25= 29A

R_DS(on)≤ 230mΩ

≤ 300ns

IXFL38N100P

HiPerFET^TM

( Electrically Isolated Tab)

t_rr

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

ISOPLUS i5-Pak^TM(HV)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

1000

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

V_GSS

V_GSM

Continuous

Transient

± 30

± 40

ISOLATED TAB

D = Drain

I_D25

I_DM

T_C= 25°C

G = Gate

S = Source

T_C= 25°C, Pulse Width Limited by T_JM

120

I_A

T_C= 25°C

Features

E_AS

^zSilicon Chip on Direct-Copper-Bond

Substrate

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

520

- High Power Dissipation

- Isolated Mounting Surface

- 2500V Electrical Isolation

T_J

-55 ... +150

150

°C

^zInternational Standard Packages

^zminiBLOC, with Aluminium Nitride

Isolation

T_JM

T_stg

-55 ... +150

^zLow Drain to Tab Capacitance(<30pF)

T_L

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

^zRugged Polysilicon Gate Cell

Structure

T_SOLD

V_ISOL

50/60 Hz, RMS, 1 minute

2500

3000

^zAvalanche Rated

I_ISOL≤ 1mA

t = 1s

^zFast Intrinsic Diode

F_C

Mounting Force

40..120/4.5..27

N/lb.

Weight

Advantages

Easy Assembly

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

1000

3.5

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 1mA

V_GS= ± 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

Applications

6.5

Switched-Mode and Resonant-Mode

± 300 nA

50 μA

Power Supplies

DC-DC Converters

I_DSS

Laser Drivers

T_J= 125°C

^zAC and DC Motor Drives

^zRobotics and Servo Controls

R_DS(on)

V_GS= 10V, I_D= 19A, Note 1

230 mΩ

DS99755B(7/09)

12 3 4 5 6

中文翻译

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