Datasheet > IXFL30N120P

IXFL30N120P

更新时间： 2023-12-06 20:13:10

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	152K
描述
功能与特色: 优点: 应用:

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中文翻译

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数据手册

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IXFL30N120P 数据手册

Polar^TMHiPerFET^TM

Power MOSFET

V_DSS= 1200V

I_D25= 18A

R_DS(on)≤ 380mΩ

≤ 300ns

IXFL30N120P

( Electrically Isolated Tab)

t_rr

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

ISOPLUS i5-Pak^TM

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

1200

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

V_GSS

V_GSM

Continuous

Transient

± 30

± 40

Isolated Tab

I_D25

I_DM

T_C= 25°C

G = Gate

S = Source

= Drain

T_C= 25°C, Pulse Width Limited by T_JM

I_A

T_C= 25°C

E_AS

1.5

Features

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

Silicon Chip on Direct-Copper-Bond

Substrate

357

- High Power Dissipation

- Isolated Mounting Surface

- 2500V~ Electrical Isolation

Avalanche Rated

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

Fast Intrinsic Diode

T_L

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

T_SOLD

V_ISOL

Advantages

50/60 Hz, RMS, 1 minute

2500

3000

Easy Assembly

Space Savings

High Power Density

I_ISOL≤ 1mA

t = 1s

F_C

Mounting Force

40..120/4.5..27

N/lb.

Weight

Applications

Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

1200

3.5

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 1mA

V_GS= ± 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

Robotics and Servo Controls

6.5

± 200 nA

I_DSS

50 μA

Note 2, T_J= 125°C

5 mA

R_DS(on)

V_GS= 10V, I_D= 15A, Note 1

380 mΩ

DS99890B(11/11)

12 3 4 5

中文翻译

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