Datasheet > IXFL210N30P3

IXFL210N30P3

更新时间： 2024-01-02 11:25:29

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	150K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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技术参数
数据手册

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IXFL210N30P3 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

IXFL210N30P3 数据手册

Preliminary Technical Information

Polar3^TMHiPerFET^TM

Power MOSFET

V_DSS= 300V

I_D25= 108A

R_DS(on) 16m

IXFL210N30P3

(Electrically Isolated Tab)

t_rr

 250ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

ISOPLUS264

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

300

V_DGR

Isolated Tab

V_GSS

V_GSM

Continuous

Transient

20

30

G = Gate

= Drain

S = Source

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

108

550

I_A

E_AS

T_C= 25C

105

Features

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150C

T_C= 25C

V/ns



Silicon Chip on Direct-Copper-Bond

Substrate

520

- High Power Dissipation

- Isolated Mounting Surface

- 2500V~ Electrical Isolation

Dynamic dv/dt Rating

Avalanche Rated

Fast Intrinsic Rectifier

Low R_DS(on)

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C



T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C



Low Drain-to-Tab Capacitance

Low Package Inductance

F_C

Mounting Force

40..120 / 9..27

N/lb

V_ISOL

50/60 Hz, RMS t = 1 min

2500

3000

I_ISOL 1 mA

t = 1 s

Advantages

Weight



Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values

Applications

(T_J= 25C Unless Otherwise Specified)

Min.

300

2.5

Typ.

Max.



DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode

Power Supplies

Uninterrupted Power Supplies

AC Motor Drives

High Speed Power Switching

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V



5.0

200 nA



I_DSS

50 A

1.5 mA



Note 2, T_J= 125C

R_DS(on)

V_GS= 10V, I_D= 105A, Note 1

16 m

DS100464A(12/13)

12 3 4 5

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