Datasheet > IXFL210N30P3

IXFL210N30P3

更新时间： 2024-02-04 18:15:20

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	150K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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技术参数
数据手册

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IXFL210N30P3 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

IXFL210N30P3 数据手册

IXFL210N30P3

Fig. 1. Output Characteristics @ T_J= 25ºC

Fig. 2. Extended Output Characteristics @ T_J= 25ºC

= 10V

300

250

200

150

100

= 10V

200

160

120

0.5

1.5

2.5

3.5

V_DS- Volts

Fig. 4. R_DS(on)Normalized to I_D= 105A Value vs.

Junction Temperature

Fig. 3. Output Characteristics @ T_J= 125ºC

3.0

2.6

2.2

1.8

1.4

1.0

0.6

0.2

= 10V

200

160

120

= 210A

= 105A

-50

-25

100

125

150

V_DS- Volts

T_J- Degrees Centigrade

Fig. 5. R_DS(on)Normalized to I_D= 105A Value vs.

Drain Current

Fig. 6. Maximum Drain Current vs.

Case Temperature

120

100

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

= 10V

T = 125ºC

T = 25ºC

100

150

200

250

300

-50

-25

100

125

150

I_D- Amperes

T_C- Degrees Centigrade

1 234 5

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