Datasheet > IXFL210N30P3

IXFL210N30P3

更新时间： 2024-01-14 05:26:25

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	150K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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技术参数
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IXFL210N30P3 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

IXFL210N30P3 数据手册

IXFL210N30P3

Fig. 8. Transconductance

Fig. 7. Input Admittance

200

180

160

140

120

100

200

160

120

= - 40ºC

25ºC

125ºC

= 125ºC

25ºC

- 40ºC

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

1.3

100

120

140

160

180

200

220

V_GS- Volts

I_D- Amperes

Fig. 9. Forward Voltage Drop of Intrinsic Diode

Fig. 10. Gate Charge

300

250

200

150

100

= 150V

= 105A

= 10mA

= 125ºC

= 25ºC

1.0

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.1

1.2

120

150

180

210

240

270

V_SD- Volts

Q_G- NanoCoulombs

Fig. 11. Capacitance

Fig. 12. Forward-Bias Safe Operating Area

100,000

10,000

1,000

100

1000

100

= 1 MHz

Limit

DS(on)

iss

25µs

100µs

oss

1ms

= 150ºC

= 25ºC

10ms

Single Pulse

100ms

rss

0.1

100

1,000

V_DS- Volts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

1 2 345

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