Datasheet > IXFL132N50P3

IXFL132N50P3

更新时间： 2024-01-09 17:22:20

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
7页	231K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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IXFL132N50P3 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.39
Base Number Matches：	1

IXFL132N50P3 数据手册

Polar3^TMHiPerFET^TM

Power MOSFET

V_DSS= 500V

I_D25= 63A

R_DS(on) 43m

IXFL132N50P3

(Electrically Isolated Tab)

t_rr

 250ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

ISOPLUS264

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

500

V_DGR

Isolated Tab

V_GSS

V_GSM

Continuous

Transient

30

40

G = Gate

S = Source

= Drain

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

330

I_A

E_AS

T_C= 25C

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150C

T_C= 25C

V/ns

Features

520

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C

^Silicon Chip on Direct-Copper-Bond

Substrate

- High Power Dissipation

- Isolated Mounting Surface

- 2500V~ Electrical Isolation

Avalanche Rated

Low Package Inductance

Fast Intrinsic Rectifier

Low R_DS(on)and Q_G

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C



F_C

Mounting Force

40..120 / 9..27

N/lb.



V_ISOL

50/60 Hz, RMS t = 1 min

2500

3000



I_ISOL 1 mA

t = 1 s

Weight

Advantages



Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values

Applications

(T_J= 25C Unless Otherwise Specified)

Min.

500

3.0

Typ.

Max.

^DC-DC Converters

^Battery Chargers

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

5.0

^Switch-Mode and Resonant-Mode

Power Supplies

200 nA

^Uninterrupted Power Supplies

^AC Motor Drives

I_DSS

50 A

3 mA

T_J= 125C

^High Speed Power Switching

Applications

R_DS(on)

V_GS= 10V, I_D= 66A, Note 1

43 m

DS100409B(6/14)

12 3 4 5 6 7

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