Datasheet > IXFK72N20

IXFK72N20

更新时间： 2024-11-20 22:47:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	103K
描述
HiPerFET Power MOSFETs

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中文翻译

获取价格

数据手册

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IXFK72N20 数据手册

HiPerFET^TM

V_DSS

I_D25

R_DS(on)

IXFK72N20 200V 72 A 35 mW

IXFK80N20 200V 80 A 30 mW

t_rr£ 200 ns

Power MOSFETs

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t_rr

Preliminary data

Symbol

TestConditions

MaximumRatings

TO-264 AA

V_DSS

V_DGR

T_J= 25°C to 150°C

200

T_J= 25°C to 150°C; R_GS= 1 MW

V_GS

Continuous

Transient

±20

±30

(TAB)

V_GSM

I_D25

T_C= 25°C

72N20

80N20

G = Gate

S = Source

D = Drain

TAB = Drain

I_DM

T_C= 25°C,

pulse width limited by T_JM

72N20

80N20

288

320

I_AR

T_C= 25°C

E_AR

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

P_D

T_C= 25°C

360

Features

T_J

-55 ... +150

150

°C

• Internationalstandardpackages

• Molding epoxies meet UL94V-0

flammabilityclassification

T_JM

T_stg

-55 ... +150

• Low R_{DS (on)}HDMOS^TMprocess

T_L

1.6 mm (0.063 in) from case for 10 s

Mountingtorque

300 -

0.9/6

°C

• Unclamped Inductive Switching (UIS)

rated

M_d

Nm/lb.in.

• Fast intrinsic rectifier

Weight

Symbol

Applications

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

• DC-DC converters

• Synchronousrectification

• Battery chargers

min. typ. max.

• Switched-modeandresonant-mode

powersupplies

• DC choppers

V_DSS

V_GS= 0 V, I_D= 1 mA

V_DS= V_GS, I_D= 4 mA

200

V_GS(th)

• Temperatureandlightingcontrols

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100

V_DS= 0.8 • V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

200

Advantages

R_DS(on)

V_GS= 10 V,I_D= 0.5 • I_D25

72N20

80N20

35 mW

30 mW

• Easy to mount

• Space savings

• High power density

Pulse test, t £ 300 ms, duty cycle d £ 2 %

IXYS reserves the right to change limits, test conditions, and dimensions.

97523C(07/00)

1 - 4

12 3 4

中文翻译

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