IXFK74N50P2

更新时间： 2024-02-12 19:56:21

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	126K
描述
PolarP2 HiPerFET Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IXFK74N50P2 数据手册

Advance Technical Information

PolarP2^TMHiPerFET^TM

Power MOSFET

V_DSS= 500V

I_D25= 74A

R_DS(on)≤ 77mΩ

IXFK74N50P2

IXFX74N50P2

t_rr

≤ 250ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-264 (IXFK)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

500

Tab

V_GSS

V_GSM

Continuous

Transient

± 30

± 40

PLUS247 (IXFX)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

185

I_A

E_AS

T_C= 25°C

P_D

T_C= 25°C

1400

Tab

dv/dt

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

V/ns

G = Gate

S = Source

= Drain

Tab = Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

Features

^zInternational Standard Packages

^zDynamic dv/dt Rating

^zAvalanche Rated

M_d

F_C

Mounting Torque (TO-264)

Mounting Force (PLUS247)

1.13/10

Nm/lb.in.

N/lb.

20..120 /4.5..27

^zFast Intrinsic Diode

Weight

TO-264

PLUS247

^zLow Q_Gand R_DS(on)

^zLow Drain-to-Tab Capacitance

^zLow Package Inductance

Advantages

Symbol

Test Conditions

Characteristic Values

Easy to Mount

Space Savings

(T_J= 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 4mA

V_GS= ± 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

500

Applications

3.0

5.0

^zDC-DC Converters

^zBattery Chargers

± 100 nA

^zSwitch-Mode and Resonant-Mode

Power Supplies

I_DSS

10 μA

1.5 mA

T_J= 125°C

^zUninterrupted Power Supplies

^zAC Motor Drives

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

77 mΩ

^zHigh Speed Power Switching

Applications

DS100252(03/10)

12 3 4

中文翻译

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IXFK74N50P2 替代型号

型号	品牌	替代类型	描述	数据表
IXFK78N50P3	IXYS	类似代替	Polar3 HiPerFET Power MOSFET
IXFX74N50P2	IXYS	类似代替	PolarP2 HiPerFET Power MOSFET
IXFX78N50P3	IXYS	功能相似	Polar3 HiPerFET Power MOSFET

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