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IXFK69N30P PDF预览

IXFK69N30P

更新时间: 2024-11-18 20:07:47
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 603K
描述
Power Field-Effect Transistor, 69A I(D), 300V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN

IXFK69N30P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-264AA
包装说明:TO-264AA, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.76雪崩能效等级(Eas):1500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:300 V最大漏极电流 (ID):69 A
最大漏源导通电阻:0.049 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-264AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):200 A认证状态:Not Qualified
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFK69N30P 数据手册

 浏览型号IXFK69N30P的Datasheet PDF文件第2页浏览型号IXFK69N30P的Datasheet PDF文件第3页浏览型号IXFK69N30P的Datasheet PDF文件第4页浏览型号IXFK69N30P的Datasheet PDF文件第5页 
PolarHTTMHiPerFET  
Power MOSFET  
IXFH69N30P  
IXFK69N30P  
VDSS  
ID25  
= 300 V  
= 69 A  
RDS(on) = 49 mΩ  
trr  
200 ns  
N-Channel Enhancement Mode  
Fast Intrinsic Diode  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 (IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
300  
300  
V
V
VGS  
Continuous  
Transient  
20  
30  
V
V
D (TAB)  
G
VGSM  
D
S
ID25  
IDM  
TC = 25°C  
69  
A
A
TO-264 (IXFK)  
TC = 25°C, pulse width limited by TJM  
200  
IAR  
TC = 25°C  
69  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
50  
mJ  
J
1.5  
D (TAB)  
G
D
S
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 4 Ω  
,
10  
V/ns  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TC = 25°C  
500  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Fast intrinsic diode  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
z
z
z
Md  
1.13/10 Nm/lb.in.  
Weight  
TO-247  
TO-264  
6
10  
g
g
Advantages  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z
Easy to mount  
Space savings  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 20 VDC, VDS = 0  
300  
V
V
z
z
High power density  
2.5  
5.0  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
TJ = 125°C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
49 mΩ  
Pulse test, t 300 µs, duty cycle d 2 %  
DS99220(12/04)  
© 2004 IXYS All rights reserved  

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