Datasheet > IXFK64N60P

IXFK64N60P

更新时间： 2024-09-29 14:56:19

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	237K
描述
功能与特色: 优点: 应用:

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中文翻译

获取价格

数据手册

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IXFK64N60P 数据手册

PolarHV^TMHiPerFET

Power MOSFET

IXFK 64N60P

IXFX 64N60P

V_DSS

I_D25

R_DS(on)

≤

600 V

64 A

96 mΩ

200 ns

N-Channel Enhancement Mode

Avalanche Rated

t_rr

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

TO-264 (IXFK)

V_DSS

V_DGR

T_J= 25° C to 150° C

600

T_J= 25° C to 150° C; R_GS= 1 MΩ

V_GSS

V_GSM

Continuous

Transient

(TAB)

I_D25

I_DM

T_C=25° C

T_C= 25° C, pulse width limited by T_JM

150

I_AR

T_C=25° C

PLUS247 (IXFX)

E_AR

E_AS

T_C=25° C

3.5

dv/dt

P_D

I_S≤I_DM, di/dt ≤100 A/µs, V_DD≤V_DSS

T_J≤150° C, R_G= 2 Ω

V/ns

T_C=25° C

1040

(TAB)

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

G = Gate

= Drain

S = Source Tab = Drain

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

300

260

° C

F_C

Mounting force (PLUS247)

Mounting torque (TO-264)

20..120/4.5..25

N/lb

Features

M_d

1.13/10 Nm/lb.in.

International standard packages

Fast recovery diode

Unclamped Inductive Switching (UIS)

rated

Weight

TO-264

PLUS247

Low package inductance

- easy to drive and to protect

Symbol

Test Conditions

Characteristic Values

Min. Typ.

(T_J= 25° C, unless otherwise specified)

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 3 mA

V_DS= V_GS, I_D= 8 mA

V_GS= 30 V_DC, V_DS= 0

600

Advantages

3.0

5.0

Easy to mount

Space savings

200

High power density

I_DSS

V_DS= V_DSS

V_GS= 0 V

1000

µA

T_J= 125° C

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25, Note 1

96 mΩ

DS99442E(01/06)

12 3 4 5 6

中文翻译

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