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IXFK64N50Q3 PDF预览

IXFK64N50Q3

更新时间: 2024-09-28 12:35:35
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 132K
描述
HiperFET Power MOSFETs Q3-Class

IXFK64N50Q3 技术参数

生命周期:Transferred零件包装代码:TO-264AA
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:unknown风险等级:8.47
其他特性:AVALANCHE RATED雪崩能效等级(Eas):4000 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):64 A
最大漏极电流 (ID):64 A最大漏源导通电阻:0.085 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-264AA
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1000 W
最大脉冲漏极电流 (IDM):160 A子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFK64N50Q3 数据手册

 浏览型号IXFK64N50Q3的Datasheet PDF文件第2页浏览型号IXFK64N50Q3的Datasheet PDF文件第3页浏览型号IXFK64N50Q3的Datasheet PDF文件第4页浏览型号IXFK64N50Q3的Datasheet PDF文件第5页 
Advance Technical Information  
HiperFETTM  
Power MOSFETs  
Q3-Class  
VDSS = 600V  
ID25 = 64A  
RDS(on) 95mΩ  
IXFK64N60Q3  
IXFX64N60Q3  
trr  
300ns  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXFK)  
Fast Intrinsic Rectifier  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
S
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
600  
600  
V
V
VDGR  
Tab  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
PLUS247 (IXFX)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
64  
A
A
250  
IA  
EAS  
TC = 25°C  
TC = 25°C  
64  
3
A
J
G
D
S
Tab  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
50  
V/ns  
W
1250  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z
Low Intrinsic Gate Resistance  
Low Package Inductance  
Fast Intrinsic Rectifier  
Low RDS(on) and QG  
z
z
z
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
High Power Density  
Easy to Mount  
Space Savings  
z
z
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
600  
3.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
z
6.5  
z
±200 nA  
Power Supplies  
DC Choppers  
Temperature and Lighting Controls  
z
IDSS  
50 μA  
1.5 mA  
z
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
95 mΩ  
DS100350(06/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  

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TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 72A I(D) | TO-264SMD