Datasheet > IXFK60N55Q2

IXFK60N55Q2

更新时间： 2024-09-27 22:11:55

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	94K
描述
HiPerFET Power MOSFETs Q-Class

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中文翻译

获取价格

数据手册

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IXFK60N55Q2 数据手册

Advanced Technical Information

HiPerFET^TM

PowerMOSFETs

Q-Class

V_DSS

I_D25

R_DS(on)

= 550 V

IXFK 60N55Q2

IXFX 60N55Q2

60 A

88 mΩ

t_rr≤ 250 ns

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low Q_g

Low intrinsic R_g, low t_rr

Symbol

TestConditions

Maximum Ratings

PLUS247^TM(IXFX)

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

550

V_GS

V_GSM

Continuous

Transient

±30

±40

D (TAB)

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

240

E_AR

E_AS

T_C= 25°C

4.0

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

TO-264 AA (IXFK)

P_D

T_C= 25°C

735

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

D (TAB)

T_L

1.6 mm (0.063 in) from case for 10 s

300

°C

G = Gate

S = Source

D = Drain

TAB = Drain

M_d

Mountingtorque

TO-264

0.9/6 Nm/lb.in.

Weight

PLUS-247

TO-264

Features

^zDouble metal process for low gate

resistance

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

^zInternational standard packages

min. typ. max.

Epoxy meet UL 94 V-0, flammability

classification

V_DSS

V_GS= 0 V, I_D= 3mA

V_DS= V_GS, I_D= 8 mA

550

2.0

^zAvalanche energy and current rated

^zFast intrinsic Rectifier

V_GS(th)

4.5

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±200 nA

50 µA

Advantages

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Easy to mount

Space savings

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

88 mΩ

High power density

DS98984(12/02)

中文翻译

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