Datasheet > IXFK60N55Q2

IXFK60N55Q2

更新时间： 2024-11-17 22:11:55

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	94K
描述
HiPerFET Power MOSFETs Q-Class

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXFK60N55Q2 数据手册

Advanced Technical Information

HiPerFET^TM

PowerMOSFETs

Q-Class

V_DSS

I_D25

R_DS(on)

= 550 V

IXFK 60N55Q2

IXFX 60N55Q2

60 A

88 mΩ

t_rr≤ 250 ns

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low Q_g

Low intrinsic R_g, low t_rr

Symbol

TestConditions

Maximum Ratings

PLUS247^TM(IXFX)

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

550

V_GS

V_GSM

Continuous

Transient

±30

±40

D (TAB)

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

240

E_AR

E_AS

T_C= 25°C

4.0

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

TO-264 AA (IXFK)

P_D

T_C= 25°C

735

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

D (TAB)

T_L

1.6 mm (0.063 in) from case for 10 s

300

°C

G = Gate

S = Source

D = Drain

TAB = Drain

M_d

Mountingtorque

TO-264

0.9/6 Nm/lb.in.

Weight

PLUS-247

TO-264

Features

^zDouble metal process for low gate

resistance

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

^zInternational standard packages

min. typ. max.

Epoxy meet UL 94 V-0, flammability

classification

V_DSS

V_GS= 0 V, I_D= 3mA

V_DS= V_GS, I_D= 8 mA

550

2.0

^zAvalanche energy and current rated

^zFast intrinsic Rectifier

V_GS(th)

4.5

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±200 nA

50 µA

Advantages

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Easy to mount

Space savings

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

88 mΩ

High power density

DS98984(12/02)

中文翻译

下载PDF

与IXFK60N55Q2相关器件

型号	品牌	获取价格	描述	数据表
IXFK62N25	IXYS	获取价格	HiPerFET Power MOSFETs Single MOSFET Die
IXFK64N50P	IXYS	获取价格	Polar Power MOSFET HiPerFET
IXFK64N50P	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFK64N50Q3	IXYS	获取价格	HiperFET Power MOSFETs Q3-Class
IXFK64N60P	IXYS	获取价格	N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK64N60P	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFK64N60P3	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXFK64N60Q3	IXYS	获取价格	Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Me
IXFK66N50Q2	IXYS	获取价格	HiPerFET Power MOSFETs Q2-Class
IXFK66N50Q2	LITTELFUSE	获取价格	功能与特色: 应用: 优点: