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IXFK52N30Q PDF预览

IXFK52N30Q

更新时间: 2024-11-18 20:31:23
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
3页 121K
描述
Power Field-Effect Transistor,

IXFK52N30Q 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.71
Base Number Matches:1

IXFK52N30Q 数据手册

 浏览型号IXFK52N30Q的Datasheet PDF文件第2页浏览型号IXFK52N30Q的Datasheet PDF文件第3页 
HiPerFETTM  
Power MOSFETs  
Q-Class  
IXFH 52N30Q  
IXFK 52N30Q  
IXFT 52N30Q  
VDSS = 300 V  
ID25 = 52 A  
RDS(on) = 60 mW  
trr  
£ 250 ns  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low trr  
Low Gate Charge and Capacitances  
Preliminary data  
Symbol  
TestConditions  
Maximum Ratings  
TO-247AD(IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MW  
300  
300  
V
V
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
(TAB)  
ID25  
IDM  
IAR  
TC = 25°C, Chip capability  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
52  
208  
52  
A
A
A
TO-268 (D3) ( IXFT)  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
1.5  
mJ  
J
G
(TAB)  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
5
V/ns  
S
PD  
TC = 25°C  
360  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TO-264AA(IXF
TL  
1.6 mm (0.063 in) from case for 10 s  
300  
°C  
G
D
Md  
Mountingtorque  
TO-247  
TO-264  
1.13/10 Nm/lb.in.  
0.9/6 Nm/lb.in.  
S
D (TAB)  
Weight  
Symbol  
TO-247  
TO-264  
TO-268  
6
10  
4
g
g
g
G = Gate  
S = Source  
TAB = Drain  
Features  
• Low gate charge  
TestConditions  
CharacteristicValues  
• Internationalstandardpackages  
• EpoxymeetUL94V-0,flammability  
classification  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• Low RDS (on) HDMOSTM process  
• Rugged polysilicon gate cell structure  
• Avalanche energy and current rated  
• Fast intrinsic Rectifier  
VDSS  
VGS = 0 V, ID = 1 mA  
VDS = VGS, ID = 4 mA  
300  
2
V
V
VGS(th)  
4
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±200 nA  
50 mA  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
Advantages  
1
mA  
• Easy to mount  
• Space savings  
• High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
60 mW  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98522B(7/00)  
1 - 2  

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