Datasheet > IXFK50N85X

IXFK50N85X

更新时间： 2024-02-23 09:10:49

品牌	Logo	应用领域
力特 - LITTELFUSE		高电压电源栅二极管
页数	文件大小	规格书
7页	320K
描述
采用快速体二极管的超级结X-Class功率MOSFET是坚固耐用的器件，具有业内最低的导通电阻，因此能够在高电压电源转换应用中实现高功率密度。这种器件采用电荷补偿原理和专有工艺技术开发，具有低栅

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数据手册

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IXFK50N85X 数据手册

X-Class HiPerFET^TM

Power MOSFET

V_DSS= 850V

I_D25= 50A

R_DS(on) 105m

IXFT50N85XHV

IXFH50N85X

IXFK50N85X

TO-268HV (IXFT)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

TO-247 (IXFH)

T_J= 25C to 150C

850

V_DGR

T_J= 25C to 150C, R_GS= 1M

V_GSS

V_GSM

Continuous

Transient

30

40

D (Tab)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

125

TO-264 (IXFK)

I_A

T_C= 25C

E_AS

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150°C

T_C= 25C

V/ns

890

T_J

-55 ... +150

150

C

D (Tab)

T_JM

T_stg

G = Gate

S = Source

= Drain

-55 ... +150

Tab = Drain

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Features

M_d

Mounting Torque (TO-247 & TO-264)

1.13 / 10

Nm/lb.in

Weight

TO-268HV

TO-247

TO-264



International Standard Packages

High Voltage Package

Low R_DS(ON)and Q_G

Avalanche Rated

Low Package Inductance



Advantages

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.



High Power Density

Easy to Mount

Space Savings



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 4mA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

850



3.5

5.5

Applications

100 nA



Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

I_DSS

50 A

3 mA

T_J= 125C



R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

105 m



DS100704D(12/16)

12 3 4 5 6 7

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