Datasheet > IXFK44N80P

IXFK44N80P

更新时间： 2024-01-24 08:44:16

品牌	Logo	应用领域
IXYS		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
4页	95K
描述
PolarHV HiPerFET Power MOSFET

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中文翻译

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数据手册
替代型号

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IXFK44N80P 数据手册

PolarHV^TMHiPerFET

Power MOSFET

IXFK 44N80P

IXFX 44N80P

V_DSS= 800

I_D25= 44

R_DS(on)≤ 190 mΩ

t_rr

≤ 250 ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

TO-264 (IXFK)

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

800

V_GS

V_GSM

Continuous

Transient

± 30

± 40

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

100

(TAB)

I_AR

E_AR

E_AS

T_C= 25°C

3.4

PLUS247 (IXFX)

dv/dt

P_D

I_S≤ I_DM, di/dt ≤ 100 A/μs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 10 Ω

V/ns

T_C= 25°C

1040

(TAB)

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

G = Gate

S = Source

D = Drain

TAB = Drain

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

300

260

°C

M_d

F_C

Mounting torque

Mounting force

(IXFK)

(IXFX)

1.13.10 Nm/lb.in.

Features

^zFast intrinsic diode

20..120 /4.5..25

N/lb

^zInternational standard packages

^zUnclamped Inductive Switching (UIS)

rated

^zLow package inductance

- easy to drive and to protect

Weight

(IXFK)

(IXFX)

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C unless otherwise specified)

Min. Typ.

Max.

Advantages

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 800 μA

V_DS= V_GS, I_D= 8 mA

V_GS= ± 30 V_DC, V_DS= 0

800

Easy to mount

Space savings

3.0

5.0

High power density

± ±200

I_DSS

V_DS= V_DSS

V_GS= 0 V

μA

T_J= 125°C

1.5 mA

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25, Note 1

190 mΩ

DS99478E(01/06)

12 3 4

中文翻译

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IXFK44N80P 替代型号

型号	品牌	替代类型	描述	数据表
IXFK44N80Q3	IXYS	类似代替	N-Channel Enhancement Mode Avalanche RatedFast Intrinsic Rectifier
IXFX44N80Q3	IXYS	功能相似	MOSFET N-CH 800V 44A PLUS247
IXFX44N80P	IXYS	功能相似	PolarHV HiPerFET Power MOSFET

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