IRFP250PBF

更新时间： 2024-02-19 08:14:40

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	1864K
描述
Power MOSFET

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中文翻译

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技术参数
数据手册
替代型号

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IRFP250PBF 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.91	配置：	Single
最大漏极电流 (Abs) (ID)：	33 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	180 W	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)

IRFP250PBF 数据手册

IRFP250, SiHFP250

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

PRODUCT SUMMARY

V_DS(V)

200

Available

_DS(on)(Ω)

V_GS= 10 V

0.085

RoHS*

Q_g(Max.) (nC)

140

COMPLIANT

_gs(nC)

_gd(nC)

Configuration

Single

DESCRIPTION

TO-247

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effictiveness.

The TO-220 package is universially preferred for

commercial-industrial applications where higher power

levels preclude the use of TO-220 devices. The TO-247 is

similar but superior to the earlier TO-218 package because

of its isolated mounting hole. It also provides greater

creepage distance between pins to meet the requirements of

most safety specifications.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-247

IRFP250PbF

SiHFP250-E3

IRFP250

Lead (Pb)-free

SnPb

SiHFP250

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

V_DS

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

200

V_GS

_C= 25 °C

Continuous Drain Current

V_GSat 10 V

I_D

T_C=100°C

Pulsed Drain Current^a

I_DM

120

W/°C

Linear Derating Factor

1.5

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

410

E_AR

Maximum Power Dissipation

_C= 25 °C

P_D

190

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

5.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 683 µH, R_G= 25 Ω, I_AS= 30 A (see fig. 12).

c. I_SD≤ 30 A, dI/dt ≤ 190 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91212

S-81274-Rev. A, 16-Jun-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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IRFP250PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFP4668PBF	INFINEON	功能相似	HEXFET Power MOSFET
IRFP4227PBF	INFINEON	功能相似	PDP SWITCH
IRFP250NPBF	INFINEON	功能相似	HEXFET㈢ Power MOSFET

与IRFP250PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFP250R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 33A I(D) \| TO-247
IRFP251	INFINEON	获取价格	N-Channel(Hexfet Transistors)
IRFP251	SAMSUNG	获取价格	N-Channel Power Mosfets
IRFP251	IXYS	获取价格	High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
IRFP251R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 33A I(D) \| TO-247
IRFP252	SAMSUNG	获取价格	N-Channel Power Mosfets
IRFP252	IXYS	获取价格	High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
IRFP252	INFINEON	获取价格	N-Channel(Hexfet Transistors)
IRFP252R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 27A I(D) \| TO-247
IRFP253	SAMSUNG	获取价格	N-Channel Power Mosfets

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