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IRFP250PBF

更新时间: 2024-11-20 05:39:31
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 1864K
描述
Power MOSFET

IRFP250PBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-247AC
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:6 weeks风险等级:0.76
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):410 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):30 A
最大漏极电流 (ID):30 A最大漏源导通电阻:0.085 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):190 W最大脉冲漏极电流 (IDM):120 A
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFP250PBF 数据手册

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IRFP250, SiHFP250  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
• Repetitive Avalanche Rated  
• Isolated Central Mounting Hole  
• Fast Switching  
• Ease of Paralleling  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
PRODUCT SUMMARY  
VDS (V)  
200  
Available  
R
DS(on) (Ω)  
VGS = 10 V  
0.085  
RoHS*  
Qg (Max.) (nC)  
140  
28  
COMPLIANT  
Q
Q
gs (nC)  
gd (nC)  
74  
Configuration  
Single  
D
DESCRIPTION  
TO-247  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effictiveness.  
G
The TO-220 package is universially preferred for  
commercial-industrial applications where higher power  
levels preclude the use of TO-220 devices. The TO-247 is  
similar but superior to the earlier TO-218 package because  
of its isolated mounting hole. It also provides greater  
creepage distance between pins to meet the requirements of  
most safety specifications.  
S
S
N-Channel MOSFET  
D
G
ORDERING INFORMATION  
Package  
TO-247  
IRFP250PbF  
SiHFP250-E3  
IRFP250  
Lead (Pb)-free  
SnPb  
SiHFP250  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
VDS  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
200  
V
VGS  
20  
T
C = 25 °C  
30  
19  
Continuous Drain Current  
VGS at 10 V  
ID  
A
TC =100°C  
Pulsed Drain Currenta  
IDM  
120  
W/°C  
mJ  
A
Linear Derating Factor  
1.5  
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
410  
30  
mJ  
W
EAR  
19  
Maximum Power Dissipation  
T
C = 25 °C  
PD  
190  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
5.0  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
10  
°C  
for 10 s  
6-32 or M3 screw  
lbf · in  
N · m  
Mounting Torque  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 683 µH, RG = 25 Ω, IAS = 30 A (see fig. 12).  
c. ISD 30 A, dI/dt 190 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91212  
S-81274-Rev. A, 16-Jun-08  
www.vishay.com  
1

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