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IRFP254B PDF预览

IRFP254B

更新时间: 2024-10-31 22:51:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 671K
描述
250V N-Channel MOSFET

IRFP254B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-3P包装说明:TO-3P, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.15
雪崩能效等级(Eas):700 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (Abs) (ID):25 A
最大漏极电流 (ID):25 A最大漏源导通电阻:0.14 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):221 W最大脉冲漏极电流 (IDM):100 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFP254B 数据手册

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November 2001  
IRFP254B  
250V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switching DC/DC converters and  
switch mode power supplies.  
25A, 250V, R  
= 0.14@V = 10 V  
DS(on) GS  
Low gate charge ( typical 95 nC)  
Low Crss ( typical 60 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
!
G
!
S
TO-3P  
IRFP Series  
G D S  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
IRFP254B  
250  
Units  
V
V
I
Drain-Source Voltage  
DSS  
- Continuous (T = 25°C)  
Drain Current  
25  
A
D
C
- Continuous (T = 100°C)  
15.9  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
100  
A
DM  
V
E
I
Gate-Source Voltage  
± 30  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
700  
mJ  
A
25  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
22.1  
mJ  
V/ns  
W
AR  
dv/dt  
5.5  
P
Power Dissipation (T = 25°C)  
221  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
1.79  
W/°C  
°C  
T , T  
-55 to +150  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink  
Thermal Resistance, Junction-to-Ambient  
Typ  
--  
Max  
0.56  
--  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
θJC  
θCS  
θJA  
0.24  
--  
40  
©2001 Fairchild Semiconductor Corporation  
Rev. C, November 2001  

IRFP254B 替代型号

型号 品牌 替代类型 描述 数据表
IRFP254B_FP001 FAIRCHILD

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Power Field-Effect Transistor, 25A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Met

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