5秒后页面跳转
捷配首页

Datasheet > IRFP260M
IRFP260M PDF预览

IRFP260M

更新时间： 2024-11-03 14:54:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 1130K
描述
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.?

阅读下载

中文翻译

获取价格

IRFP260M 数据手册

 浏览型号IRFP260M的Datasheet PDF文件第2页浏览型号IRFP260M的Datasheet PDF文件第3页浏览型号IRFP260M的Datasheet PDF文件第4页浏览型号IRFP260M的Datasheet PDF文件第5页浏览型号IRFP260M的Datasheet PDF文件第6页浏览型号IRFP260M的Datasheet PDF文件第7页 
IRFP260MPbF  
IR MOSFET™  
Features  
Advanced Process Technology  
V(BR)DSS  
200V  
0.04  
50A  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
Fully Avalanche Rated  
Ease of Paralleling  
RDS(on) max.  
ID  
Simple Drive Requirements  
Lead-Free  
Description  
IR MOSFET™ technology from Infineon utilizes  
advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
rugged device design that IR MOSFET™ devices are  
well known for, provides the designer with an  
extremely efficient and reliable device for use in a  
wide variety of applications.  
TO-247AD  
G
D
S
Gate  
Drain  
Source  
The TO-247 package is preferred for commercial-  
industrial applications where higher power levels  
preclude the use of TO-220 devices. The TO-247 is  
similar but superior to the earlier TO-218 package  
because of its isolated mounting hole.  
Standard Pack  
Form  
Base part number  
Package Type  
Orderable Part Number  
Quantity  
IRFP260MPbF  
TO-247AD  
Tube  
25  
IRFP260MPbF  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
50  
35  
A
200  
300  
W
PD @TC = 25°C  
Maximum Power Dissipation  
W/°C  
Linear Derating Factor  
2.0  
± 20  
560  
50  
V
mJ  
A
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
mJ  
V/ns  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt  
Operating Junction and  
30  
10  
-55 to + 175  
°C  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
300  
Mounting torque, 6-32 or M3 screw  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case  
Typ.  
Max.  
0.50  
–––  
40  
Units  
–––  
0.24  
–––  
RJC  
RCS  
RJA  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
°C/W  
1
2020-05-28  
1234567...9

中文翻译

下载PDF

与IRFP260M相关器件

型号 品牌 获取价格 描述 数据表
IRFP260MPBF INFINEON

获取价格

 		HEXFET® Power MOSFET
IRFP260N INFINEON

获取价格

 		Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A)
IRFP260NHR INFINEON

获取价格

 		Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Met
IRFP260NPBF INFINEON

获取价格

 		HEXFET Power MOSFET
IRFP260PBF INFINEON

获取价格

 		HEXFET㈢ Power MOSFET
IRFP260PBF VISHAY

获取价格

 		Power MOSFET
IRFP264 IXYS

获取价格

 		Standard Power MOSFET - N-Channel Enhancement Mode
IRFP264 VISHAY

获取价格

 		Power MOSFET
IRFP264 INFINEON

获取价格

 		Power MOSFET(Vdss=250V, Rds(on)=0.075ohm, Id=38A)
IRFP264N INFINEON

获取价格

 		Power MOSFET(Vdss=250V, Rds(on)=60mohm, Id=44A)

与IRFP260M相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证