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IRFP260M

更新时间： 2023-12-06 20:09:26
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 1130K
描述
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.?

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IRFP260M 数据手册

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IRFP260MPbF  
IR MOSFET™  
Features  
Advanced Process Technology  
V(BR)DSS  
200V  
0.04  
50A  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
Fully Avalanche Rated  
Ease of Paralleling  
RDS(on) max.  
ID  
Simple Drive Requirements  
Lead-Free  
Description  
IR MOSFET™ technology from Infineon utilizes  
advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
rugged device design that IR MOSFET™ devices are  
well known for, provides the designer with an  
extremely efficient and reliable device for use in a  
wide variety of applications.  
TO-247AD  
G
D
S
Gate  
Drain  
Source  
The TO-247 package is preferred for commercial-  
industrial applications where higher power levels  
preclude the use of TO-220 devices. The TO-247 is  
similar but superior to the earlier TO-218 package  
because of its isolated mounting hole.  
Standard Pack  
Form  
Base part number  
Package Type  
Orderable Part Number  
Quantity  
IRFP260MPbF  
TO-247AD  
Tube  
25  
IRFP260MPbF  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
50  
35  
A
200  
300  
W
PD @TC = 25°C  
Maximum Power Dissipation  
W/°C  
Linear Derating Factor  
2.0  
± 20  
560  
50  
V
mJ  
A
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
mJ  
V/ns  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt  
Operating Junction and  
30  
10  
-55 to + 175  
°C  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
300  
Mounting torque, 6-32 or M3 screw  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case  
Typ.  
Max.  
0.50  
–––  
40  
Units  
–––  
0.24  
–––  
RJC  
RCS  
RJA  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
°C/W  
1
2020-05-28  
1234567...9

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