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IRFP264 PDF预览

IRFP264

更新时间: 2024-11-19 22:51:39
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
2页 50K
描述
Standard Power MOSFET - N-Channel Enhancement Mode

IRFP264 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-247AD
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:7.59外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (Abs) (ID):38 A最大漏极电流 (ID):38 A
最大漏源导通电阻:0.075 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):280 W
最大脉冲漏极电流 (IDM):150 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFP264 数据手册

 浏览型号IRFP264的Datasheet PDF文件第2页 
IRFP 264 VDSS = 250 V  
ID(cont) = 38 A  
Standard Power MOSFET  
RDS(on) = 0.075 Ω  
N-ChannelEnhancementMode  
Symbol  
Test Conditions  
MaximumRatings  
TO-247 AD  
VDSS  
VDGR  
TJ = 25°C to 150°C  
250  
250  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
D(TAB)  
VGSM  
ID25  
IDM  
IAR  
TC = 25°C  
38  
150  
38  
A
A
A
G = Gate,  
S = Source,  
D = Drain,  
TAB = Drain  
TC = 25°C, pulse width limited by TJM  
EAR  
TC = 25°C  
28  
5
mJ  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
V/ns  
PD  
TC = 25°C  
280  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
Md  
Mountingtorque  
1.13/10 Nm/lb.in.  
Internationalstandardpackage  
JEDEC TO-247 AD  
Weight  
6
g
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Highcommutatingdv/dtrating  
Fast switching times  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Applications  
Symbol  
Test Conditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Switch-modeandresonant-mode  
powersupplies  
min. typ. max.  
Motorcontrold  
UninterruptiblePowerSupplies(UPS)  
DC choppers  
VDSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250 µA  
250  
2
V
V
VGS(th)  
4
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100 nA  
Advantages  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
25 µA  
250 µA  
Easy to mount with 1 screw  
(isolated mounting screw hole)  
Space savings  
RDS(on)  
VGS = 10 V, ID = 23 A  
Pulse test, t 300 µs, duty cycle d 2 %  
0.075  
Highpowerdensity  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
96668(1/96)  
1 - 2  

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