Datasheet > IRFP32N50

IRFP32N50

更新时间： 2024-11-01 22:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	96K
描述
Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A)

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中文翻译

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数据手册

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IRFP32N50 数据手册

PD - 94099A

IRFP32N50K

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l Switch Mode Power Supply (SMPS)

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency

Circuits

V_DSS

500V

R_DS(on)typ.

I_D

32A

0.135Ω

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

l Low R_DS(on)

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

130

P_D@T_C= 25°C

Power Dissipation

460

W/°C

Linear Derating Factor

3.7

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case )

300

°C

Mounting torque, 6-32 or M3 screw

10lb*in (1.1N*m)

Avalanche Characteristics

Symbol

E_AS

Parameter

Single Pulse Avalanche Energy

Avalanche Current

Typ.

Max.

450

Units

–––

I_AR

E_AR

Repetitive Avalanche Energy

Thermal Resistance

Symbol

Parameter

Junction-to-Case

Typ.

–––

Max.

0.26

–––

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.24

–––

°C/W

www.irf.com

05/24/01

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与IRFP32N50相关器件

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