Datasheet > IRFP3306

IRFP3306

更新时间： 2023-12-06 20:11:36

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	304K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRFP3306 数据手册

PD - 97128

IRFP3306PbF

HEXFET^®Power MOSFET

Applications

V_DSS

R_DS(on)typ.

60V

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

3.3m

4.2m

max.

I_D

160A

(Silicon Limited)

120A

(Package Limited)

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

TO-247AC

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

160c

110

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current d

120

620

P_D@T_C= 25°C

220

Maximum Power Dissipation

Linear Derating Factor

1.5

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery f

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

300

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

184

Avalanche Currentꢀd

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy g

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.67

–––

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case k

Case-to-Sink, Flat Greased Surface

0.24

–––

°C/W

Junction-to-Ambient jk

www.irf.com

3/3/08

12 3 4 5 6 7...9

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